Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma

Dallaeva, Dinara; Bilalov, B. A.; Gitikchiev, M.A.; Kardashova, G. D.; Safaraliev, G. K.; Tománek, Pavel; Škarvada, Pavel; Smith, Steve

doi:10.1016/j.tsf.2012.11.023

Cited by 22 publications

(15 citation statements)

References 10 publications

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“…The statistical parameters of 3-D surface roughness analysis also show that the statistical description of the films is in agreement with the data obtained by Dallaeva et al [36].…”

Section: Discussionsupporting

confidence: 90%

“…Magnetron sputtering device allows fabrication of materials with good stoichiometry. This method was described by Dallaeva et al [36]. Aluminum nitride films were deposited on sapphire substrates (Al 2 O 3 ) at different substrate temperatures.…”

Section: Methodsmentioning

confidence: 99%

“…Aluminum nitride films were deposited on sapphire substrates (Al 2 O 3 ) at different substrate temperatures. Monocrystalline sapphire is one of the hardest oxides, with high hardness at high temperatures, good thermo-physical properties and it is optically transparent in the visible light to near-infrared region [36].…”

Section: Methodsmentioning

confidence: 99%

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Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

Stach

Dallaeva

Ţălu

et al. 2015

Materials Science-Poland

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The aim of this study is to characterize the surface topography of aluminum nitride (AlN) epilayers prepared by magnetron sputtering using the surface statistical parameters, according to ISO 25178-2:2012. To understand the effect of temperature on the epilayer structure, the surface topography was investigated through atomic force microscopy (AFM). AFM data and analysis of surface statistical parameters indicated the dependence of morphology of the epilayers on their growth conditions. The surface statistical parameters provide important information about surface texture and are useful for manufacturers in developing AlN thin films with improved surface characteristics. These results are also important for understanding the nanoscale phenomena at the contacts between rough surfaces, such as the area of contact, the interfacial separation, and the adhesive and frictional properties.

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“…The statistical parameters of 3-D surface roughness analysis also show that the statistical description of the films is in agreement with the data obtained by Dallaeva et al [36].…”

Section: Discussionsupporting

confidence: 90%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

Stach

Dallaeva

Ţălu

et al. 2015

Materials Science-Poland

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“…Transmission spectra were obtained from the samples prepared on sapphire substrates with surface nitridization [20], achieved by flowing molecular nitrogen in the growth reactor for 20 min prior to SiC growth. Then the SiC target with required concentration of Al was sputtered onto the substrate.…”

Section: Absorption Spectrummentioning

confidence: 99%

Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

Dallaeva

Ramazanov

et al. 2015

Photonics, Devices, and Systems VI

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The objective of the study is to characterize the dependence of the optical properties of solid solutions of silicon carbide and aluminum nitride on composition. Even small differences in composition provide manipulation of band gap features over a wide range. Data for this paper were collected by X-ray diffraction, photoluminescence and absorption spectroscopy. The evolution of the observed optical properties as a result of compositional changes were studied. X-ray studies confirm the presence of a(SiC) 1-x (AlN) x solid solution. Investigation of absorption spectra shows the optical band gap of the sample with composition (SiC) 0,88 (AlN) 0,12 is 3.5eV, and 4.24 eV for the (SiC) 0,36 (AlN) 0,64 solid solution. The photoluminescence spectra demonstrate the strong dependence of the spectra on composition x. The experimental results are in agreement with theory. These data demonstrate the optimization of optical properties for particular optoelectronic applications by varying the (SiC) 1-х (AlN) х composition.

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“…The nanoscale three-dimensional (3-D) surface micro-morphologies are investigated by atomic force microscopy (AFM). Surface nitridization proved to be a useful tool for many applications [17,18]. The autocorrelation function with height-height correlation function give the quantitative data about the morphology of surface.…”

mentioning

confidence: 99%

Analyzing the fractal feature of nickel thin films surfaces modified by low energy nitrogen ion

Ţălu¹,

Yadav²,

Arman³

et al. 2019

Vak Forsch Prax

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Summary Fractal concepts are used to explore how different energies (10, 20 and 50 keV) and fluence of 5 × 1017 N+ cm−2 affect the morphology of nickel thin film. The nickel thin film with thickness of 100 nm is prepared by electron beam evaporation technique at room temperature on stainless steel (AISI 316) substrates. The nanoscale three‐dimensional (3‐D) surface micro‐morphologies are investigated by atomic force microscopy (AFM). Interface width is used to describe the surface height fluctuations. The autocorrelation function with height‐height correlation function give the quantitative data about the morphology of surface. The value of roughness exponent and fractal dimension is computed by height‐height correlation function. Fractal measure is an important analysis which provides fundamental insights into the texture characteristics and a direct way of testing their functional role.

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Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma

Cited by 22 publications

References 10 publications

Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

Analyzing the fractal feature of nickel thin films surfaces modified by low energy nitrogen ion

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