2011
DOI: 10.1063/1.3560852
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Structural origin of set-reset process in a new bulk Si15Te83Ge2 phase-change memory material

Abstract: A new phase-change memory material, in bulk, has been prepared by melt-quenching technique, which has a better glass forming ability. This sample is set and resettable relatively easily for several cycles at 2mA SET and RESET input currents, and is likely to be a suitable material for phase-change memory applications. Raman scattering studies have been undertaken during the SET and RESET operations to elucidate the local structural transformations that occur during these operations

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Cited by 5 publications
(3 citation statements)
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“…In addition, many other tellurides, such as Si 15 Te 83 Ge 2 , Al 1.3 Sb 3 Te, and GeTe, are introduced to realize more controllable phase transition and many advanced materials' fabrication methods are also studied. [53][54][55][56][57] The ultrafast transition or the crystallization mode is the crucial influence factor of power consumption, usually, a faster transition speed and an elaborate crystallization mode of PCM corresponding to the lower power consumption of neuromorphic computing. In addition, ultrafast transition means a fast operation and training speed, which is significant to the quick-response demanded application.…”
Section: Novel Materials For the Phase-change Phenomenonmentioning
confidence: 99%
“…In addition, many other tellurides, such as Si 15 Te 83 Ge 2 , Al 1.3 Sb 3 Te, and GeTe, are introduced to realize more controllable phase transition and many advanced materials' fabrication methods are also studied. [53][54][55][56][57] The ultrafast transition or the crystallization mode is the crucial influence factor of power consumption, usually, a faster transition speed and an elaborate crystallization mode of PCM corresponding to the lower power consumption of neuromorphic computing. In addition, ultrafast transition means a fast operation and training speed, which is significant to the quick-response demanded application.…”
Section: Novel Materials For the Phase-change Phenomenonmentioning
confidence: 99%
“…See Ref. 8 for experimental details of sample preparation, thermal analysis and Raman scattering studies. In the present work, Raman experiments are performed on powder samples using 50× objective.…”
Section: Methodsmentioning
confidence: 99%
“…[2][3][4] On the other hand, few reports are available on silicon-telluride glasses, which are efficient acousticoptic materials and can also be used in memory-type switching diodes 5,6 and phase change memory devices. 7,8 In view of various potential applications of ChGs, a precise knowledge of crystalline phases is necessary for the development of suitable phase-change, erasable electrical/optical storage media. In the present work, the thermal behavior of Si 15 Te 85-x Ge x glasses of a wide composition range (1 ≤ x ≤ 11) has been investigated using Alternating Differential Scanning Calorimetry (ADSC).…”
Section: Introductionmentioning
confidence: 99%