Ge rich Chalcogenide material for Non volatile memory applications

Sangeetha, B.; Gayathri, A.; Kamble, Akash; Kumar, H. D.; Sachin, M.; Siddesh,; Balaji, R.; Sangam, V. G.; Joseph, C.M.; Suresh, K.

doi:10.1016/j.matpr.2017.02.182

Cited by 3 publications

(1 citation statement)

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“…[1]. They are beginning to be widely applied in optoelectronics as infrared optical elements, as materials for image creation and holographic information storage, acousto-optical elements, optical memory switches [2,3], X-ray imaging [4] etc. These materials are less affected by temperature because they have a low level of phonons and have heavy anions.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and optical properties of the glassy compound As0.63S2.70Sb1.37Te0.30

Iovu¹,

Culeac²,

Verlan³

et al. 2023

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The amorphous calcogenide semiconductor As0.63S2.70Sb1.37Te0.30 was synthesized and thin films based on it were obtained. XRD and optical images investigations showed the amorphous and homogeneous nature of the samples. The optical transmission spectrum in the UV-Vis range of As0.63S2.70Sb1.37Te0.30 thin films shows good transparency in the spectral range 0.7-3.5 µm with a single absorption threshold at 2.05 eV and with refractive index in infrared 2.3. The irradiation of films with light leads to a parallel shift of the transmission spectrum to the IR range. The materials with As0.63S2.70Sb1.37Te0.30 composition have high optical transparency have high optical transparency that make they promises for applications in holographic memory devices, optical amplitude and phase recorder, optical processing units and others.

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Section: Introductionmentioning

confidence: 99%