Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias

Kozak, A.O.; Иващенко, В. И.; Porada, O. K.; Ivashchenko, L. A.; Томила, T. В.; Manjara, V.S.; Klishevych, G.V.

doi:10.1016/j.mssp.2018.07.023

Cited by 26 publications

(5 citation statements)

References 47 publications

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“…The value of 4.8 eV is close to the bandgap of the films, deposited with the excess of ammonia in reactive mixture, that can reach 5.4 eV [63]. It should be emphasized that a stepwise change in the value of E g with an increase in the nitrogen content in the films was found in several works [64][65][66]. The authors attribute such a change to the fact that even with a small addition of a nitrogen-containing reagent, due to the more preferential formation of Si-N bonds, the composition of the films changes sharply and becomes close to silicon nitride.…”

Section: Dielectric Propertiessupporting

confidence: 55%

Chemical Structure, Optical and Dielectric Properties of PECVD SiCN Films Obtained from Novel Precursor

et al. 2022

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A phenyl derivative of hexamethyldisilazane—bis(trimethylsilyl)phenylamine—was first examined as a single-source precursor for SiCN film preparation by plasma enhanced chemical vapor deposition. The use of mild plasma (20 W) conditions allowed the preparation of highly hydrogenated polymeric-like films. The synthesis was carried out under an inert He atmosphere or under that of NH3 with the deposition temperature range from 100 to 400 °C. The chemical bonding structure and elemental composition were characterized by Fourier-transform infrared spectroscopy, energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy. The surface morphology was investigated by scanning electron microscopy. Ellipsometric porosimetry, a unique high-precision technique to investigate the porosity of thin films, was applied to examine the porosity of SiCN samples. The films were found to possess a morphologically homogenous dense defect-free structure with a porosity of 2–3 vol.%. SiCN films were studied in terms of their optical and dielectric properties. Depending on the deposition conditions the refractive index ranged from 1.53 to 1.78. The optical bandgap obtained using UV-Vis spectroscopy data varied from 2.7 eV for highly hydrogenated polymeric-like film to 4.7 eV for cross-linked nitrogen-rich film. The dielectric constant was found to decrease from 3.51 to 2.99 with the rise of hydrocarbon groups’ content. The results obtained in this study were compared to the literature data to understand the influence of precursor design to the optical and electrical properties of the films.

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Section: Dielectric Propertiessupporting

confidence: 55%

Chemical Structure, Optical and Dielectric Properties of PECVD SiCN Films Obtained from Novel Precursor

et al. 2022

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“…The related parameter of optical bandgap demonstrated a stepwise increase from 3.3 eV to 5.0 eV at NH 3 /TMS = 0.6. Such a behavior was observed previously in several publications for SiCN films produced using different precursors [14,[57][58][59]. The main reason can be a change of chemical binding structure.…”

Section: Variation Of Nh 3 Concentration In Initial Gas Mixturesupporting

confidence: 81%

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

et al. 2023

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PECVD SiC:H (SiCN:H) films were produced using tetramethylsilane (TMS) as a precursor in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions were chosen in order to prevent the complete decomposition of the precursor molecules and promote the incorporation of the fragments of precursor into the film structure. The effect of deposition temperature and composition of gas mixture on the chemical bonding structure, elemental composition, deposition rate, and optical properties (transmittance, optical bandgap, and refractive index) of films have been examined. Use of the chosen deposition conditions allowed them to reach a relatively high deposition rate (up to 33 nm/min), compared with films produced in high plasma power conditions. Use of ammonia as an additional gas led to effective incorporation of N atoms in the films. The composition of the films moved from SiC:H to SiN:H with increasing of ammonia content to P(NH3)/P(TMS) = 1. The refractive index and optical bandgap of the films varied in the range of 1.55–2.08 and 3.0–5.2 eV, correspondingly, depending on the film composition and chemical bonding structure. The effect of treatment of SiCN films deposited at 400 °C by plasma of He, O2 or NH3 were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. It was shown that plasma treatment significantly changes the surface characteristics. The water contact angle of the film was changed from 71 to 37° after exposure in the plasma conditions.

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“…The absorption band due to Si—C bonds covering a range from 770 to 810 cm −1 is, however, rather weak in our samples; see shadow band marked by Si—C in the left‐hand graph of Figure . Meanwhile, absorption in this band somewhat strengthens in sample A after sonication in chloroform (spectrum 2, downward arrow in Figure ).…”

Section: Resultsmentioning

confidence: 56%

Sonochemical Modification of SiGe Layers for Photovoltaic Applications

Nadtochiy

Korotchenkov

Schlosser

2019

Physica Status Solidi (a)

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To improve the photovoltaic response of SiGe and amorphous silicon (a-Si)/SiGe surfaces, a sonochemical treatment in chloroform (CHCl 3 ) is used. The use of the sonochemical reaction slows down the observed surface photovoltage (SPV) decay and enhances its magnitude in SiGe and a-Si/SiGe thin layers grown on Si. The average surface-integrated photovoltage and decay time can increase up to 50%. This effect is not observed in distilled water, indicative of the fact that CH-containing radicals can lead to the observed improvements. It is suggested that the effect can be explained as follows: CHCl 3 is decomposed and produces hydrocarbon chains, which are then decomposed further away into hydrogen and carbon. The reactive Si dangling bonds revealed on the surface of SiGe alloys are saturated by the hydrocarbon species to passivate the surface. It is, therefore, advantageous to use sonochemical surface modification of silicon-germanium-based photovoltaic materials in chloroform solutions.

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Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias

Cited by 26 publications

References 47 publications

Chemical Structure, Optical and Dielectric Properties of PECVD SiCN Films Obtained from Novel Precursor

Chemical Structure, Optical and Dielectric Properties of PECVD SiCN Films Obtained from Novel Precursor

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

Sonochemical Modification of SiGe Layers for Photovoltaic Applications

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