Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy

Herninda, Thalita Maysha; Hsu, Chin-En; Hsueh, H. C.; Ho, Ching‐Hwa

doi:10.1016/j.mtadv.2023.100379

Cited by 6 publications

(4 citation statements)

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“…As per Végard's Law, there is a linear correlation between the composition of ternary alloys and the variation of their lattice parameters. 24 The observed trend indicates the validity of Végard's Law and suggests the presence of a uniform alloy structure. Additionally, in order to investigate the crystalline quality, the average crystallite size and micro strain are calculated using Debye–Scherrer's formula, 25 and strain formula, 26 where, k = 0.9 is the shape factor, λ = 0.15406 nm is the X-ray wavelength of Cu-Kα radiation, θ is the Bragg's angle, and β is the full width at half maximum (FWHM) of the diffracted peak.…”

Section: Resultsmentioning

confidence: 70%

“…A trend of Bragg peak shifting suggests forming an alloy system of tin–chalcogenide compounds in between SnS and SnSe compounds. 24…”

Section: Resultsmentioning

confidence: 99%

“…27,29 Higher-wave number modes (above 153 cm −1 ), marked predominantly by S and Se atom displacements, are expected to exhibit two-mode Raman scattering activity, indicating the breaking symmetry of the Sn–S and Sn–Se vibration. 24 Raman spectra of the TSSe thin film revealed the only characteristic of Sn–S and Sn–Se bands without the presence of Sn (4+) based impurity species in the composite. These Raman spectral features indicate atomic alloying.…”

Section: Raman Spectroscopymentioning

confidence: 97%

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Tunability in the optoelectrical performance of n-SnS_(1−x)Se_x thin films for photovoltaic applications

Nisha,

Sarkar,

Kumar

et al. 2023

New J. Chem.

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Section: Resultsmentioning

confidence: 70%

“…A trend of Bragg peak shifting suggests forming an alloy system of tin–chalcogenide compounds in between SnS and SnSe compounds. 24…”

Section: Resultsmentioning

confidence: 99%

Section: Raman Spectroscopymentioning

confidence: 97%

See 1 more Smart Citation

Tunability in the optoelectrical performance of n-SnS_(1−x)Se_x thin films for photovoltaic applications

Nisha,

Sarkar,

Kumar

et al. 2023

New J. Chem.

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“…This behavior is distinct from the other degenerate semiconductors or metals in that they show increased resistivity as the temperature is increased. The high carrier concentration to cause a degenerate semiconductor behavior can be observed in previous ternary compounds of SnS 1– x Se x , where a high amount of tin vacancies had rendered a large amount of hole density and made a degenerate p -type semiconductor of SnS and SnSe. In the case of the degenerate semiconductor, the resistivity is mostly influenced by the scattering events occurring between the high-density hot carriers.…”

Section: Resultsmentioning

confidence: 79%

Phosphorus-Doped Multilayer In₆Se₇: The Study of Structural, Electrical, and Optical Properties for Junction Device

Peng,

Muhimmah,

2023

JACS Au

Self Cite

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This work investigates the characteristic of layered In 6 Se 7 with varying phosphorus (P) dopant concentrations (In 6 Se 7 :P) from P = 0, 0.5, 1, to P = 5%. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses indicate that the structure and morphology of the In 6 Se 7 :P series compounds remain unchanged, exhibiting a monoclinic structure. Room-temperature micro-Raman (μRaman) result of all the compositions of layered In 6 Se 7 :P reveals two dominant peaks at 101 ± 3 cm −1 (i.e., In−In bonding mode) and 201 ± 3 cm −1 (i.e., Se−Se bonding mode) for each P composition in In 6 Se 7 . An extra peak at approximately 171 ± 2 cm −1 is observed and it shows enhancement at the highest P composition of In 6 Se 7 :P 5%. This mode is attributed to P−Se bonding caused by P doping inside In 6 Se 7 . All the doped and undoped In 6 Se 7 :P showed n-type conductivity, and their carrier concentrations increased with the P dopant is increased. Temperature-dependent resistivity revealed a reduction in activation energy (for the donor), as the P content is increased in the In 6 Se 7 :P samples. Kelvin probe measurement shows a decrease in work function (i.e., an energy increase of Fermi level) of the n-type In 6 Se 7 multilayers with the increase of P content. The indirect and direct band gaps for all of the multilayer In 6 Se 7 :P of different P composition are identical. They are determined to be 0.732 eV (indirect) and 0.772 eV (direct) obtained by microtransmittance and microthermoreflectance (μTR) measurements. A rectified n−n + homojunction was formed by stacking multilayered In 6 Se 7 /In 6 Se 7 :P 5%. The built-in potential is about V bi ∼ 0.15 V. It agrees well with the work function difference between the two layer compounds.

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Axially‐Polarized Excitonic Series and Anisotropic van der Waals Stacked Heterojunction in a Quasi‐1D Layered Transition‐Metal Trichalcogenide

Rosyadi,

Lin,

Peng

et al. 2024

Advanced Science

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Anisotropic optical 2D materials are crucial for achieving multiple‐quanta functions within quantum materials, which enables the fabrication of axially polarized electronic and optoelectronic devices. In this work, multiple excitonic emissions owning polarization‐sensitive orientations are clearly detected in a multilayered quasi‐1D ZrS3 nanoribbon with respect to the nanostripe edge. Four excitons denoted as AS1, AS2, AS, and A2 with E ⊥ b polarized direction and one prominent A1 exciton with E || b polarized emission are simultaneously detected in the polarized micro‐photoluminescence (µPL) measurement of 1.9–2.2 eV at 10 K. In contrast to light emission, polarized micro‐thermoreflectance (µTR) measurements are performed to identify the polarization dependence and verify the excitons in the multilayered ZrS3 nanoribbon from the perspective of light absorption. At 10 K, a prominent and broadened peak on the lower‐energy side, containing an indirect resonant emission (DI) observed by µPL and an indirect defect‐bound exciton peak (AInd) observed by both µPL and µTR, is simultaneously detected, confirming the existence of a quasi‐direct band edge in ZrS3. A van der Waals stacked p‐GaSe/n‐ZrS3 heterojunction solar cell is fabricated, which demonstrates a maximum axially‐polarized conversion efficiency up to 0.412% as the E || b polarized light incident onto the device.

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Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy

Cited by 6 publications

References 61 publications

Tunability in the optoelectrical performance of n-SnS_(1−x)Se_x thin films for photovoltaic applications

Tunability in the optoelectrical performance of n-SnS_(1−x)Se_x thin films for photovoltaic applications

Phosphorus-Doped Multilayer In₆Se₇: The Study of Structural, Electrical, and Optical Properties for Junction Device

Axially‐Polarized Excitonic Series and Anisotropic van der Waals Stacked Heterojunction in a Quasi‐1D Layered Transition‐Metal Trichalcogenide

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Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy

Cited by 6 publications

References 61 publications

Tunability in the optoelectrical performance of n-SnS(1−x)Sex thin films for photovoltaic applications

Tunability in the optoelectrical performance of n-SnS(1−x)Sex thin films for photovoltaic applications

Phosphorus-Doped Multilayer In6Se7: The Study of Structural, Electrical, and Optical Properties for Junction Device

Axially‐Polarized Excitonic Series and Anisotropic van der Waals Stacked Heterojunction in a Quasi‐1D Layered Transition‐Metal Trichalcogenide

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Product

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Tunability in the optoelectrical performance of n-SnS_(1−x)Se_x thin films for photovoltaic applications

Tunability in the optoelectrical performance of n-SnS_(1−x)Se_x thin films for photovoltaic applications

Phosphorus-Doped Multilayer In₆Se₇: The Study of Structural, Electrical, and Optical Properties for Junction Device