Tunability in the optoelectrical performance of n-SnS_(1−x)Se_x thin films for photovoltaic applications

Abstract

2D tin chalcogenides are promising materials for thin-film solar cells due to their excellent characteristics.

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

“…The confirmation of the production of secondary phases was established through the detection of Raman vibrations occurring at frequencies greater than 300 cm −1 . A prominent Raman mode at around 309 cm −1 is observed (indicated by star ( * )), is responsible for A g mode of Sn 2 S 3 [4]. The presence of substantial Sn 2 S 3 always leads to sulfur-rich SnS, which was confirmed by EDX analysis above mentioned.…”

“…However, they might be attributable to an impurity phase or the extremely oxidizable surface characteristics of the thin film. In HR-scan of S 2p (see figure 10(b)), the binding energies of S / p 2 3 2 and S / p 2 1 2 levels are 161.10 eV and 162.23 eV respectively which originated from S (2−) state [4]. In the S 2p spectra, another pair at 163.05 eV and 164.19 eV (indicated by S * ) was observed at a higher binding energy.…”

“…Tin sulphide (SnS), a member of the metal chalcogenide family, has recently come into its own as an optoelectrical material with highly desirable electrical and optical characteristics [1][2][3]. These semiconducting materials possesses the advantage of being inexpensive, earth-abundant constituents and non-toxic to the environment [4]. SnS remains chemically stable when exposed to water and oxygen in the environment, and it naturally occurs as the mineral herzenbergite [5].…”