Structural, optical, electrical and morphological properties of ZnTe films deposited by electron beam evaporation

Ahamed, M. G. Syed Basheer; Nagarethinam, V. S.; Thayumanavan, A.; Murali, K. R.; Sanjeeviraja, C.; Jayachandran, M.

doi:10.1007/s10854-009-0051-9

Cited by 8 publications

(4 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Direct band gap energy of CdSe thin films decreases from 1.74eV to 1.67eV as the thin film thickness increases from 1.5kÅ to 4.5kÅ. Similar trend has been observed by different workers in case of other group II-IV compounds [13][14][15][16][17][18].…”

Section: Table 2 Variation Of Bandgap With Thin Films Thicknesssupporting

confidence: 83%

Thickness Dependent Structural and Optical Properties of Cadmium Selenide Thin Films

Jani

Patel

Rathod

et al. 2013

AMR

View full text Add to dashboard Cite

In this paper structural and optical properties of CdSe thin films with different thickness deposited by thermal evaporation under vacuum onto glass substrates are presented. The structural investigations performed by means of XRD technique showed that the films have a polycrystalline and hexagonal (würtzite) structure. The values of some important parameters of the studied films (absorption coefficient and optical bandgap energy) are determined from transmission spectra. The values of the optical bandgap energy (Eg) calculated from the absorption spectra, ranged between 1.67 - 1.74 eV.

show abstract

Section: Table 2 Variation Of Bandgap With Thin Films Thicknesssupporting

confidence: 83%

Thickness Dependent Structural and Optical Properties of Cadmium Selenide Thin Films

Jani

Patel

Rathod

et al. 2013

AMR

View full text Add to dashboard Cite

show abstract

“…transparent nature in the infrared region. This is in good agreement with the investigations reported in literature [26][27][28][29]. This makes ZnTe good candidate to be used as optical window within infrared spectral region [37].…”

supporting

confidence: 92%

“…Similar results can be seen in literature [20]. Similar trend has been observed by different workers in case of other group II-IV compounds [21][22][23][24][25]29]. Photons with energy greater than bandgap of the material will be absorbed and the photons of longer wavelength will be transmitted.…”

supporting

confidence: 89%

Structural and Optical Characterization of Zinc Telluride Thin Films

Rathod

Patel

et al. 2013

AMR

View full text Add to dashboard Cite

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

show abstract

“…Due to the resonant excitation of Raman scattering the longitudinal optical modes can be traced to the fifth order: 203 cm −1 (1LO), 410 cm −1 (2LO), 615 cm −1 (3LO), 820 cm −1 (4LO) and 1027 cm −1 (5LO) [10]. The specific tellurium peaks at 127 and 141 cm −1 indicate structural changes inside ZnTe due to laser irradiation with high power density (6.37 × 10 5 W cm −2 ).…”

Section: Resultsmentioning

confidence: 99%

In situcharacterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy

Wiedemeier

Berth

Zrenner

et al. 2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe-nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 10 5 W cm −2 . The Raman signal time transients of ZnTe-nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface.

show abstract

Structural, optical, electrical and morphological properties of ZnTe films deposited by electron beam evaporation

Cited by 8 publications

References 22 publications

Thickness Dependent Structural and Optical Properties of Cadmium Selenide Thin Films

Thickness Dependent Structural and Optical Properties of Cadmium Selenide Thin Films

Structural and Optical Characterization of Zinc Telluride Thin Films

In situcharacterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy

Contact Info

Product

Resources

About