<i>In situ</i>characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy

Wiedemeier, Volker; Berth, Gerhard; Zrenner, A.; Larramendi, E. M.; Woggon, U.; Lischka, K.; Schikora, D.

doi:10.1088/0268-1242/26/10/105023

Cited by 16 publications

(10 citation statements)

References 12 publications

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“…The time constants for Te modes found here (360 s) are, however, bigger than those found in Ref. 24 (244 s). The dependence of Te peaks intensity vs laser power is highly correlated with the exposure time, hence it exhibits also exponential dependence.…”

Section: Resultscontrasting

confidence: 81%

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Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy

Zielony

Płaczek‐Popko

Henrykowski

et al. 2012

Journal of Applied Physics

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Formation of nanostructured TiO2 by femtosecond laser irradiation of titanium in O2 J. Appl. Phys. 112, 063108 (2012) Ultralow-power local laser control of the dimer density in alkali-metal vapors through photodesorption Appl. Phys. Lett. 101, 091107 (2012) Optical absorption of silicon nanowires J. Appl. Phys. 112, 033506 (2012) Crystallization of fused silica surfaces by ultra-violet laser irradiation J. Appl. Phys. 112, 023118 (2012) Mechanism for atmosphere dependence of laser damage morphology in HfO2/SiO2 high reflective films Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm À1 . For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm À1 . With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm À1 and 140 cm À1 . Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process. V C 2012 American Institute of Physics.

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Section: Resultscontrasting

confidence: 81%

“…24. The time constants for Te modes found here (360 s) are, however, bigger than those found in Ref.…”

Section: Resultscontrasting

confidence: 76%

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy

Zielony

Płaczek‐Popko

Henrykowski

et al. 2012

Journal of Applied Physics

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“…Indeed, formation of tellurium under optical illumination is possible in several II-VI telluride semiconductors. It has been observed in CdTe [36], CdZnTe [37,38] and ZnTe [39,40] crystals under continuous wave illumination above the band gap. Recently, excitation of coherent phonons in a segregated layer of Te on ZnTe was induced by illuminating the semiconductor crystal with intense 10 fs optical pulses [41].…”

Section: (E)mentioning

confidence: 96%

Terahertz dynamics of lattice vibrations in Au/CdTe plasmonic crystals: Photoinduced segregation of Te and enhancement of optical response

et al. 2016

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Excitation of coherent optical phonons in solids provides a pathway for ultrafast modulation of light on a sub-ps timescale. Here, we report on efficient 3.6 THz modulation of light reflected from hybrid metal/semiconductor plasmonic crystals caused by lattice vibrations in a few nm thick layer of elemental tellurium. We observe that surface plasmon polaritons contribute significantly to photoinduced formation of this thin layer at the interface between a telluride-based II-VI semiconductor, such as (Cd,Mg)Te or (Cd,Mn)Te, and a one-dimensional gold grating. The change in interface composition is monitored via the excitation and detection of coherent optical tellurium phonons of A1 symmetry by femtosecond laser pulses in a pump-probe experiment. The patterning of a plasmonic grating onto the semiconductor enhances the transient signal which originates from the interface region. This allows monitoring the layer formation and observing the shift of the phonon frequency caused by confinement of the lattice vibrations in the nm-thick segregated layer. Efficient excitation and detection of coherent optical phonons by means of surface plasmon polaritons are evidenced by the dependence of the signal strength on polarization of pump and probe pulses and its spectral distribution.

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“…Figure 3a shows a typical Raman setup based on a confocal geometry used by Wiedemeier et al [162]. Confocal setups of this type are commonly used and employ an infinity-corrected objective lens (large numerical aperture (NA) lens) to focus the pump light.…”

Section: Experimental Considerationsmentioning

confidence: 99%

“…Confocal setups of this type are commonly used and employ an infinity-corrected objective lens (large numerical aperture (NA) lens) to focus the pump light. Wiedemeier et al [162] used a diode-pumped solid-state laser as a monochromatic light source centred at 532 nm. Confocal mode is achieved by the use of a pinhole module in front of the spectrometer to spatially filter the light.…”

Section: Experimental Considerationsmentioning

confidence: 99%

Raman Techniques: Fundamentals and Frontiers

et al. 2019

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Driven by applications in chemical sensing, biological imaging and material characterisation, Raman spectroscopies are attracting growing interest from a variety of scientific disciplines. The Raman effect originates from the inelastic scattering of light, and it can directly probe vibration/rotational-vibration states in molecules and materials. Despite numerous advantages over infrared spectroscopy, spontaneous Raman scattering is very weak, and consequently, a variety of enhanced Raman spectroscopic techniques have emerged. These techniques include stimulated Raman scattering and coherent anti-Stokes Raman scattering, as well as surface- and tip-enhanced Raman scattering spectroscopies. The present review provides the reader with an understanding of the fundamental physics that govern the Raman effect and its advantages, limitations and applications. The review also highlights the key experimental considerations for implementing the main experimental Raman spectroscopic techniques. The relevant data analysis methods and some of the most recent advances related to the Raman effect are finally presented. This review constitutes a practical introduction to the science of Raman spectroscopy; it also highlights recent and promising directions of future research developments.

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In situcharacterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy

Cited by 16 publications

References 12 publications

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy

Terahertz dynamics of lattice vibrations in Au/CdTe plasmonic crystals: Photoinduced segregation of Te and enhancement of optical response

Raman Techniques: Fundamentals and Frontiers

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