Structural, optical, and hole transport properties of earth-abundant chalcopyrite (CuFeS2) nanocrystals

Bastola, Ebin; Bhandari, Khagendra P.; Subedi, Indra; Podraza, Nikolas J.; Ellingson, Randy J.

doi:10.1557/mrc.2018.117

Cited by 37 publications

(37 citation statements)

References 40 publications

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“…When converting the wavelength to photo energy, these three absorption bands correspond to 3.17 eV, 2.20 eV and 1.83 eV which are in accordance with bandgap of VB-CB, VB-IB I, and VB-IB II, respectively. [28,29] Thin Film. Mitigation of residual carbon-based ligands on nanoparticles surface is reported as beneficial for thin film fabrication.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and optoelectronic properties of Cu3VSe4 nanocrystals

et al. 2020

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The ternary chalcogenide Cu 3 VSe 4 (CVSe) with sulvanite structure has been theoretically predicted to be a promising candidate for photovoltaic applications due to its suitable bandgap for solar absorption and the relatively earth-abundant elements in its composition. To realize the absorber layer via an inexpensive route, printed thin-films could be fabricated from dispersions of nano-sized Cu 3 VSe 4 precursors. Herein, cubic Cu 3 VSe 4 nanocrystals were successfully synthesized via a hot-injection method. Similar with reported Cu 3 VS 4 nanocrystals, Cu 3 VSe 4 nanocrystals with cubic structure exhibit three absorption bands in the UV-Visible range indicative of a potential intermediate bandgap existence. A thin film fabricated by depositing the nanoparticles Cu 3 VSe 4 on FTO coated glass substrate, exhibited a p-type behavior and a photocurrent of~4 μA/cm 2 when measured in an electrochemical cell setting. This first demonstration of photocurrent exhibited by a CVSe nanocrystals thin film signifies a promising potential in photovoltaic applications.

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Section: Resultsmentioning

confidence: 99%

Synthesis and optoelectronic properties of Cu3VSe4 nanocrystals

et al. 2020

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“…However, the conductivity is low so too thick a layer will add series resistance. (Cu,Fe) S 2 , tried by Bastola et al (2018) 133 gave 12% PCE.…”

Section: Sulfide Back Contactsmentioning

confidence: 92%

Back contacts materials used in thin film CdTe solar cells—A review

Hall

Lamb

Irvine

2021

Energy Science & Engineering

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“…Provided that the reaction is conducted in a cascade, involving VSe 2 formation and further addition of Cu(II), unreacted Se from VSe 2 formation could react with Cu(II) resulting in Cu 2 Se impurities. It is conceivable that as the reaction proceeds, 26,27,39 the three absorption peaks could be ascribed to the following bandgaps: VB-CB (3.24 eV), VB-IB I (2.24 eV), and VB-IB II (1.86 eV), respectively, when converting wavelength in photon energy. Photoluminescence (PL) measurements were conducted to determine the bandgap of the nanosheets for comparison with the reported theoretical bandgap.…”

Section: Study Of the Cu 3 Vse 4 Formation Mechanism To Get Insight mentioning

confidence: 99%

“…Intermediate band semiconductors recently raised special attention for their potential to exceed the Shockley-Queisser limits in thin-film solar photovoltaics. Semiconductors with an intermediate band can absorb energies below the bandgap energy through two optical transitions from the valence to the intermediate band and from the intermediate to the conduction band, resulting in enhanced conversion efficiency [27][28][29] . Besides, the three optical transitions caused by the intermediate band can also lower the energy losses relying on thermal relaxation of optically excited carriers 30 .…”

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Cascade synthesis and optoelectronic applications of intermediate bandgap Cu3VSe4 nanosheets

Liu

Lai

Zhang

et al. 2020

Sci Rep

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Two-dimensional (2D) ternary materials recently generated interest in optoelectronics and energy-related applications, alongside their binary counterparts. To date, only a few naturally occurring layered 2D ternary materials have been explored. The plethora of benefits owed to reduced dimensionality prompted exploration of expanding non-layered ternary chalcogenides into the 2D realm. This work presents a templating method that uses 2D transition metal dichalcogenides as initiators to be converted into the corresponding ternary chalcogenide upon addition of copper, via a solution-phase synthesis, conducted in high boiling point solvents. The process starts with preparation of VSe2 nanosheets, which are next converted into Cu3VSe4 sulvanite nanosheets (NSs) which retain the 2D geometry while presenting an X-ray diffraction pattern identical with the one for the bulk Cu3VSe4. Both the scanning electron microscopy and transmission microscopy electron microscopy show the presence of quasi-2D morphology. Recent studies of the sulfur-containing sulvanite Cu3VS4 highlight the presence of an intermediate bandgap, associated with enhanced photovoltaic (PV) performance. The Cu3VSe4 nanosheets reported herein exhibit multiple UV–Vis absorption peaks, related to the intermediate bandgaps similar to Cu3VS4 and Cu3VSe4 nanocrystals. To test the potential of Cu3VSe4 NSs as an absorber for solar photovoltaic devices, Cu3VSe4 NSs thin-films deposited on FTO were subjected to photoelectrochemical testing, showing p-type behavior and stable photocurrents of up to ~ 0.036 mA/cm2. The photocurrent shows a ninefold increase in comparison to reported performance of Cu3VSe4 nanocrystals. This proves that quasi-2D sulvanite nanosheets are amenable to thin-film deposition and could show superior PV performance in comparison to nanocrystal thin-films. The obtained electrical impedance spectroscopy signal of the Cu3VSe4 NSs-FTO based electrochemical cell fits an equivalent circuit with the circuit elements of solution resistance (Rs), charge-transfer resistance (Rct), double-layer capacitance (Cdl), and Warburg impedance (W). The estimated charge transfer resistance value of 300 Ω cm2 obtained from the Nyquist plot provides an insight into the rate of charge transfer on the electrode/electrolyte interface.

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Structural, optical, and hole transport properties of earth-abundant chalcopyrite (CuFeS2) nanocrystals

Abstract: Abstract

Cited by 37 publications

References 40 publications

Synthesis and optoelectronic properties of Cu3VSe4 nanocrystals

Synthesis and optoelectronic properties of Cu3VSe4 nanocrystals

Back contacts materials used in thin film CdTe solar cells—A review

Cascade synthesis and optoelectronic applications of intermediate bandgap Cu3VSe4 nanosheets

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