Structural, optical and electrical properties of low temperature grown undoped and (Al, Ga) co-doped ZnO thin films by spray pyrolysis

Makuku, O.; Mbaiwa, Foster; Sathiaraj, T.S.

doi:10.1016/j.ceramint.2016.06.073

Cited by 45 publications

(17 citation statements)

References 53 publications

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“…47 For this reason, it typically results in fewer lattice distortion and crystal defects when it substitutes for Zn 2+ . 48 Aluminium/gallium co-doped ZnO (AGZO), [49][50][51] indium/gallium co-doped ZnO (IGZO), [52][53][54][55] and aluminium/indium co-doped ZnO (AIZO) [56][57][58] thin films have been prepared previously by various techniques. However, until this study, they had not been synthesised via AACVD.…”

Section: Introductionmentioning

confidence: 99%

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

et al. 2018

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Section: Introductionmentioning

confidence: 99%

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

et al. 2018

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“…The dislocation density d ( ) and lattice strain e ( ) were calculated by using the following relations [32,33].…”

Section: Results and Discussion Xrd Analysismentioning

confidence: 99%

Comparative study for seed layer solvent effects on structural and optical properties of MgZnO thin films deposited by chemical bath deposition technique

Baig

Asif

Ashraf

et al. 2020

Mater. Res. Express

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C-axis oriented Magnesium doped Zinc Oxide (MgZnO) thin films are promising candidates for variety of applications especially optoelectronic devices. In this work, the effects of seeding solvents on structural and optical properties of MgZnO films were analyzed. The comparison was performed by varying the seed layer solvent i.e. 2-Methoxyethanol, 2-Propanol, Ethanol and Methanol. MgZnO thin films were synthesized on different seed layered glass substrates using Chemical Bath Deposition (CBD) method. The XRD results revealed the hexagonal wurtzite structure for all samples. However, the film with seed layer 2-Methoxyethanol solvent had preferred c-axis orientation and better crystallanity. For 2-Methoxyethanol solvent based seed layer: the morphological study showed wrinkled free, unfractured and highly aligned MgZnO nanorods grown perpendicular to the substrate. Energy dispersive x-ray (EDS) spectroscopy confirmed the presence of magnesium in ZnO film. Highest average transmittance of 80% and band gap value of 3.3 eV was recorded through UV-vis spectroscopy. The optical constants (refractive index and extinction coefficient) were determined by reflectance and absorbance data. Furthermore complex dielectric constant and energy loss functions were estimated.

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“…The absorption coefficient can be calculated from transmittance data, using the Beer-Lambert law [18]:…”

Section: Thin Film Characterization Methodsmentioning

confidence: 99%

“…Each of Al and Ga dopants provides a unique effect on the structural defects and properties of the ZnO matrix. It has been reported that codoping of both dopants in ZnO thin films led to morphological and bandgap modifications and corresponding electrical properties of the films at varying codoping concentrations [13,[17][18][19]. Codoping of Al and Ga in ZnO films (AGZO) were reported to improve the conductivity of the ZnO films [13,18].…”

Section: Introductionmentioning

confidence: 99%

Effect of Al and Ga codoping on the morphological, electronic, and optical properties of ZnO transparent conductive thin films prepared by spray pyrolysis technique

Sripianem¹,

Techapiesancharoenkij²

2018

Turk J Phys

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Codoping a semiconductor thin film with two or more dopants is a feasible technique to improve the electrical properties of the thin film. In this work, we studied the codoping of Al and Ga n-type impurities in a ZnO film (AGZO) deposited on a glass substrate by the spray pyrolysis method. The total doping concentration, [Al + Ga]/[Al + Ga + Zn], was 5 at.% with varying Al:Ga codoping proportions of 0:5, 1.25:3.75, 2.5:2.5, 3.75:1.25, and 5:0 at.%. The effect of Al/Ga codoping on the structural, texture, morphological, optical, and electrical properties of the AGZO films were investigated using X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscopy (SEM), UVvisible spectroscopy, and four-point probe technique, respectively. Varying Al:Ga codoping proportions significantly alter the textures and morphologies of the AGZO thin films. Thin films with higher Al doping content exhibit amorphouslike structures due to fine nano grains with high concentrations of disordered grain boundary regions. The optical transmittance spectrums show transmittance higher than 80% in the visible light region for all the codoped films. The sheet resistances and electrical resistivity of the AGZO films are significantly lower than those of the 5 at.% Al-doped ZnO films.

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Structural, optical and electrical properties of low temperature grown undoped and (Al, Ga) co-doped ZnO thin films by spray pyrolysis

Cited by 45 publications

References 53 publications

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Comparative study for seed layer solvent effects on structural and optical properties of MgZnO thin films deposited by chemical bath deposition technique

Effect of Al and Ga codoping on the morphological, electronic, and optical properties of ZnO transparent conductive thin films prepared by spray pyrolysis technique

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