2020
DOI: 10.1088/2053-1591/ab7566
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Comparative study for seed layer solvent effects on structural and optical properties of MgZnO thin films deposited by chemical bath deposition technique

Abstract: C-axis oriented Magnesium doped Zinc Oxide (MgZnO) thin films are promising candidates for variety of applications especially optoelectronic devices. In this work, the effects of seeding solvents on structural and optical properties of MgZnO films were analyzed. The comparison was performed by varying the seed layer solvent i.e. 2-Methoxyethanol, 2-Propanol, Ethanol and Methanol. MgZnO thin films were synthesized on different seed layered glass substrates using Chemical Bath Deposition (CBD) method. The XRD re… Show more

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Cited by 9 publications
(5 citation statements)
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References 39 publications
(51 reference statements)
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“…Chemical Bath Deposition is a process used to deposit thin films onto a substrate which involves the use of a chemical solution that contains precursors for the desired material [ 109 , 110 , 111 , 112 ]. The substrate is immersed in the solution and a reaction occurs at the surface of the substrate, resulting in the deposition of a thin film.…”
Section: Preparation Methods Of Zno Filmsmentioning
confidence: 99%
“…Chemical Bath Deposition is a process used to deposit thin films onto a substrate which involves the use of a chemical solution that contains precursors for the desired material [ 109 , 110 , 111 , 112 ]. The substrate is immersed in the solution and a reaction occurs at the surface of the substrate, resulting in the deposition of a thin film.…”
Section: Preparation Methods Of Zno Filmsmentioning
confidence: 99%
“…We observe that the fitted n value of the ZnO obtained by SPE changes from 2.65 at 400 nm to 1.83 at 800 nm, which is in accordance with the values reported in the literature. [41,42] In addition, unlike the ZnO film deposited by ALD, the ZnO film deposited by SPE exhibits a rather high extinction coefficient of 0.5 that decreases rapidly to a near-zero value in the wavelength range 400-450 nm. Such a behavior is commonly associated with lattice defects.…”
Section: Optical Properties Of Zno Filmsmentioning
confidence: 99%
“…Zinc oxide (ZnO) is a significant II–VI group semiconductor with a direct bandgap of approximately 3.37 eV (Baig et al , 2020), which is beneficial for photonic applications (Shabannia, 2015). Furthermore, the large-binding energy of 60 meV (Baig et al , 2020) makes it an active excitonic emission even at room temperature (Shabannia, 2015). Well-aligned ZnO nanorods (NRs) demonstrated excellent performance with great visible transmittance.…”
Section: Introductionmentioning
confidence: 99%
“…Well-aligned ZnO nanorods (NRs) demonstrated excellent performance with great visible transmittance. As a result, high-quality c -axis synthesis of ZnO thin films is supposed to be necessary for potential applications in optoelectronic devices (Baig et al , 2020). One-dimensional ZnO semiconducting nanostructures such as nanowires and nanorods are regarded to be essential multipurpose basic building blocks for the manufacture of various potential applications in electronics and optoelectronics devices such as light-emitting diodes, photodetectors and solar cells (Abdulrahman et al , 2021; Rusli et al , 2012; Ji et al , 2009), ZnO NRs has exhibited many advantages including a larger surface area ratio (Chu et al , 2021), good sensitivity to absorb oxygen on the surface, high quantum efficiency and slow electron/hole recombination rate (Ko et al , 2015; Aziz et al , 2014).…”
Section: Introductionmentioning
confidence: 99%
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