Structural, optical and electrical properties of the Zn doped MoO3 deposited on porous silicon

From nanoparticles to nanofilms: exploring effects of Zn addition for nanostructure modification and photoluminescence intensification of MoO3−x nanomaterials

“…In figure 11(a), the origin of peak at about 471 nm (2.63 eV) is related to the transition between defect states. The studies on the absorption of Zn-doped MoO 3 films indicate that there is an absorption band centred at 450-500 nm [60], while the energy difference between d 2 z and d xz sub-bands of pentacoordinated Mo 5+ centre is 2.65 eV [31]. Thus, the generation of peak at about 471 nm can be attributed to the d xz −d 2 z transition.…”

Room-temperature growth optimization and PL characteristic of polytype h/α-MoO3 thin films by chemical precipitation method

“…The emission bands can be attributed to the radiative decay of the Mo d-d band -d yz transitions [23]. The peak at 417 nm (417, 420, 422, and 420 for samples P 1 , P 2 , H 1, and H 2 , respectively) could be due to band transitions caused by the presence of Mo and O interstitial sites as well as the surface defects [51]. The emission peaks at around 380-460 nm are attributed to surface defects such as O vacancies…”

Designing a TiO2-MoO3-BMIMBr nanocomposite by a solvohydrothermal method using an ionic liquid aqueous mixture: an ultra high sensitive acetaminophen sensor

“…16 MoO 3 are widely used in catalysts, photoelectrochemical devices, gas sensors, electrochemical capacitors, and other fields with their excellent physical and chemical properties. 17 However, the performance of TMO materials alone is not always ideal. However, due to their inherent disadvantages, such as poor electron conductivity, low stability in acidic media, and weak adsorbate adsorption and activation capacities, there are some key challenges in the practical applications of TMOs.…”