Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound

Abstract

Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N 2 /HMDSN plasma. The structural properties of the deposited films have been investigated by the Fourier transform infrared spectroscopy technique. Spectrophotometry measurements have been used to determine films optical constants (refractive index, dielectric constant and energy band gap); in addition, the photoluminescence from these films has been recorded. The electrical resistivity of films has been estimated from the measurements of current-voltage characteristics of deposited thin films. The effect of the different plasma conditions on these structural, optical and electrical properties of the prepared thin films, as well as the correlation between the different properties are reported.

Enhancing the separation properties of plasma polymerized membranes on polydimethylsiloxane substrates by adjusting the auxiliary gas in the PECVD processes

“…However, the AFM measurements showed that the formation of the layer structure for the coating systems on the PDMS substrate is comparable to that on a Si wafer. Saloum et al found that a change in auxiliary gas from nitrogen to argon is associated with a higher fragmentation of the HMDSN precursor as described above [55]. A higher fragmentation of the monomer, on the other hand, may cause nanoparticles to be formed already in the plasma bulk, which are adsorbed on the substrate surface during the coating process.…”

“…Saloum et al were able to demonstrate the same behavior when comparing nitrogen and argon as auxiliary gas: FT-IR measurements showed that in the presence of atomic nitrogen an increase of the N-H band is accompanied by a decrease of the Si-C bond. Reason for this may be the insertion of N-H into the Si-C bonds and in the segments of the film network, whilst N-H was formed in the plasma bulk through chemical reaction between nitrogen and hydrogen released from the precursor [55]. This seems to further favor the incorporation of oxygen during post-oxidation, whereby the mechanisms cannot be fully explained here.…”

“…Notable is that although the monomer HMDSN does not contain oxygen and O 2 was not added to the vacuum chamber, a considerable amount of O in the coatings surfaces can be detected. This may originate from post-synthetic reactions with atmospheric oxygen and/or water or trace impurities in the precursor (HMDSN) or auxiliary gases [55,56]. Especially the SiNOCH-N 2 sample has a significantly higher oxygen content than the other samples, which is accompanied by a comparably low N content.…”

Characteristic Making of Ba0.4Sr0.6TiO3 Thin Film Nanoparticles

“…In terms of general applications, thin films have reached various fields of science. In the construction sectors, especially those related to metal materials, thin layers are used as a material to increase corrosion resistance [7]. In the field of electronics, thin films are used to Trends Sci.…”