Structural, optical and electrical characteristics of yttrium oxide films deposited by laser ablation

Abstract

Articles you may be interested inStructural and optical properties of yttrium oxide thin films for planar waveguiding applications J. Vac. Sci. Technol. A 28, 1388 (2010); 10.1116/1.3503621 Structure and dielectric properties of amorphous LaAlO 3 and LaAlO x N y films as alternative gate dielectric materials Physical and electrical characterization of HfO 2 metal-insulator-metal capacitors for Si analog circuit applications J. Appl. Phys. 94, 551 (2003); 10.1063/1.1579550 Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates J.

Oxygen-segregation-controlled epitaxy of Y2O3 films on Nb(110)

“…Therefore, a simple and reliable method of manufacturing yttria films with controlled defect concentrations is desirable for both applications as well as for fundamental research on the electronic structure and bonding in crystalline yttria at the microscopic level. [3][4][5]. Here we demonstrate a very simple and reliable method of manufacturing clean, single-crystalline Y 2 O 3 films on (110)-oriented Nb substrates.…”

“…In the last few years thin yttria films have attracted increasing attention. Its high dielectric constant (ε = 13 − 17), its high resistivity, and high breakdown strength make Y 2 O 3 a viable candidate for silicon very-large-scale applications such as highdensity storage capacitors in miniaturized dynamic random access memory (DRAM) [2][3][4]. Moreover, Y 2 O 3 /Nb tunneling barriers were found among the best in interface quality and the highest in tunneling resistance and, consequently, meet important prerequisites for superconducting digital electronics [2].…”

Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

“…This compares favorably with values reported previously for yttrium oxide films. 2,3,6,8,11,13 The behavior of the refractive index can be explained by the behavior of the average roughness of the films measured with AFM. The films deposited at low temperatures without etching time or too long on etching time ͑20 min͒ were considerably rougher than those deposited on previously etched substrates for 5 or 15 min.…”

“…1 Many methods have been used for the deposition of yttrium oxide films. These methods include electron-beam evaporation, 1,2 laser ablation, 3,4 sputtering, 5-8 thermal oxidation, 9,10 vacuum thermal evaporation, 11,12 metalorganic chemical vapor deposition, 13 low-pressure CVD, 14 and molecular-beam epitaxy. 15 In particular, sputtering techniques present advantages such as film uniformity over large areas, good surface smoothness, excellent thickness control, bulk-like properties, and high deposition rates.…”

High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si(1 1 1) by electron beam evaporation

“…Thus, when doped with rareearth ions, yttrium oxide films can achieve acceptable quantum efficiencies, i.e., high emission intensities. To obtain Eu:Y 2 O 3 films, various growth techniques have been used, including pulsed laser deposition [9], e-beam evaporation [10], chemical vapor deposition [11] and others. Importantly, Y 2 O 3 has a cubic structure with a well-matched lattice parameter of 10.60 Å to Si(1 0 0) (5.43 Å) and Si(1 1 1) (5.34 Å).…”