Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

Abstract

Articles you may be interested inStructural and optical properties of yttrium oxide thin films for planar waveguiding applications

Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical vapor deposition

“…15 Concerning deposition methods, physical vapor deposition (PVD) processes were traditionally used to deposit metal oxides. Y 2 O 3 has been deposited by sputtering, [19][20][21][22] by ionized cluster beam deposition, [23][24][25] by ion beam sputtering, [26][27][28] by pulsed laser deposition, 29 by electron beam evaporation, [30][31][32][33] and by molecular beam epitaxy. 34,35 However, most of PVD techniques may not be suited in large scale CMOS processing on 200 or 300 mm Si wafers.…”

Low interface states and high dielectric constant Y2O3 films on Si substrates

“…5 Epitaxial growth of rare-earth oxides has been reported to be achieved using molecular beam epitaxy ͑MBE͒. 6 Several other deposition methods have been used to obtain Y 2 O 3 thin films, such as pulsed laser deposition, 7 rf-magnetron sputtering, 8 spray pyrolysis, 9 and sol gel. 10 In the present work we report the deposition and characterization of Y 2 O 3 thin films obtained by ultrasonic spray pyrolysis.…”

Metal‐organic CVD of Y2O3 Thin Films using Yttrium tris‐amidinates

“…Y 2 O 3 thin films have been mainly deposited via physical vapor deposition (PVD) techniques including thermal oxidation, molecular beam epitaxy, electron beam evaporation, ion beam‐assisted deposition, pulsed laser deposition, and radio frequency sputtering . MOCVD is a promising technique for large‐scale fabrication of thin films owing to its distinct advantages over PVD techniques .…”