Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique

Bairam, Chousein; Yalçın, Yeşim; Efkere, Halil İbrahim; Çokduygulular, Erman; Çetinkaya, Çağlar; Kınacı, Barış; Özçelik, Süleyman

doi:10.1016/j.physb.2021.413126

Cited by 15 publications

(3 citation statements)

References 58 publications

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“…6). Ali et al [36] found 3.255 eV for Ti-doped ZnO by the sputter deposition technique [39]. Also, it was found 3.17 and 3.30 eV for ZnO-TiO 2 composites prepared by sol-gel at 15% and 25% TiO 2 .…”

Section: Resultsmentioning

confidence: 97%

Synthesis of TiO2/ZnO photoanodes on FTO conductive glass for photovoltaic applications

et al. 2023

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For oxide semiconductors for application in dye-sensitized solar cells (DSSCs), titanium dioxide conjugated with zinc oxide thin films was synthesized and characterized. The UV (ultraviolet) spectrum characterization showed a peak of absorbance at around 355 nm, with a band gap of 3.25 eV and reflectance around 85%. Such characteristics allowed the fabrication of DSSCs with N719 dye, under simulated light of 100 mW/cm 2 . The highest efficiency of 1.17% was at 5% titanium dioxide and 4 h of dye immersion.

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Section: Resultsmentioning

confidence: 97%

Synthesis of TiO2/ZnO photoanodes on FTO conductive glass for photovoltaic applications

et al. 2023

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“…This film can be doped by n-type and p-type elements in its structure. Titanium (IV), tin, and indium are some n-type doping elements [6][7][8][9][10][11]. Lithium is a p-type element with advantageous properties to be applied as a dopant, such as electrical mobility, energy harvesting, electrical resistivity, and lower charge leakage [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Effects of Lithium Salt on Optical and Structural Properties of ZnO Thin Films

Nunes,

Almeida,

Freire

2024

NHC

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Thin film semiconductors are broadly applied in optical and energy conversion devices. Some thin films comprise titanium dioxide, tin oxide, and zinc oxide. The characteristics of the thin films can be changed according to their application. Zinc oxide semiconductors thin films were combined with different concentrations of LiClO4, varying between 5 and 15% weight percentage. This study aimed to qualify and quantify the morphological, structure, and optical changes in ZnO affected by the presence of lithium salt in the microstructure. The x-ray measurements demonstrated larger polycrystalline sizes, a maximum of 57.53 nm. The band gap energy values lowered to 3.16 eV, lower than the usual 3.37 eV, and reflectance values reached 80%.

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“…Zinc oxide (ZnO) is the most popular material due to its unique properties like high optical transmittance, good transparency, high refractive index, high absorbance, high conductivity, high electron mobility, wide band gap and large exciton binding energy. [6][7][8][9][10] For this reason, it has attracted great attention in electronic and optoelectronic applications such as such as field effect transistors, capacitors, transistors, solar cells, sensors, photodetectors and light emitting diodes. Various techniques like magnetron sputtering, molecular beam epitaxy (MBE), atomic layer deposition (ALD), spray pyrolysis and sol-gel spin coating have been used to deposit ZnO film on substrate.…”

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confidence: 99%

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

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Dielectric, conductivity, and modulus properties of a metal oxide semiconductor (MOS) capacitor with zinc oxide (ZnO) interlayer produced via radio-frequency magnetron sputtering were investigated using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (*='-i''), dielectric loss factor (tan ), ac conductivity (ac), and complex electric modulus (M*=M'+iM'') were studied in temperature interval of 100-400 K for two frequencies (100 and 500 kHz). While the dielectric constant (') and loss ('') value increase as the temperature rises, their values decrease as the frequency rises. The increase in ' and '' is explained by thermal activation of charge carriers. Also, the ac value increases both frequency and temperature increase. The thermal activation energy was determined from slope of Arrhenius plot.

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Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique

Cited by 15 publications

References 58 publications

Synthesis of TiO2/ZnO photoanodes on FTO conductive glass for photovoltaic applications

Synthesis of TiO2/ZnO photoanodes on FTO conductive glass for photovoltaic applications

Effects of Lithium Salt on Optical and Structural Properties of ZnO Thin Films

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

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