Structural, morphological, optical and electrical properties of CdTe films deposited by CSS under an argon–oxygen mixture and vacuum

Mendoza, M. A.; Pérez, R. Castanedo; Delgado, G. Torres; Márquez‐Marín, J.; Orea, A. Cruz; Zelaya-Ángel, O.

doi:10.1016/j.solmat.2010.07.023

Cited by 31 publications

(9 citation statements)

References 10 publications

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“…Meanwhile, the carrier concentration increased until 300 • C, and then declined with an increase in the deposition temperature. The films with higher carrier concentration tended to have more carrier-to-carrier scattering due to the augmented chances of carrier impacts, which resulted in lower mobility [37]. The resistivity was found in the order of 10 3 Ω cm, indicating no significant effect on resistivity by temperature during film growth.…”

Section: Hall Effect Measurementmentioning

confidence: 99%

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

et al. 2021

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Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical characteristics of sputtered CdSe films were determined using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV–Vis spectrophotometry, and Hall effect measurement, respectively. The XRD results revealed the polycrystalline nature of CdSe, with a hexagonal structure having a strong preferential orientation toward the (002) plane. As evident from the FESEM images, the average grain size and surface morphology of the films were dependent on deposition temperatures. The carrier concentration was obtained as 1014 cm−3. The band gap in the range of 1.65–1.79 eV was found. The explored results suggested that sputtered CdSe thin film deposited at 300 °C has the potential to be used as a window layer in solar cells.

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Section: Hall Effect Measurementmentioning

confidence: 99%

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

et al. 2021

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“…This disarrangement of lattice is created during fabrication process of a thin film [30]. Micro strain (  ) of the films was calculated to study the influence of annealing temperature using the WH plots, from the gradient of the equation (4). The calculated values for the micro strain are shown in Fig.…”

Section: °Cmentioning

confidence: 99%

“…Various techniques have been employed to deposit CdTe films, such as, closed space sublimation [4], electron beam evaporation [5], RF magneto sputtering [6], hot wall epitaxy [7], pulsed laser deposition [8], pulsed laser evaporation [9], molecular beam epitaxy [10], chemical vapor deposition [11], electrodeposition [12] and thermal evaporation [13]. Out of these methods, thermal evaporation stands out due to its low level of impurity presence in the growing layer, low trend of oxide formation, straight-line propagation of vapors from source to substrate, high deposition rate, low material consumption as well as low cost of operation.…”

Section: Introductionmentioning

confidence: 99%

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Kumarasinghe

Dissanayake

Pemasiri

et al. 2017

Materials Science in Semiconductor Processing

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Thin film microstructure and its properties can be effectively altered with post deposition heat treatments. In this respect, CdTe thin films were deposited on glass substrates at a substrate temperature of 200 °C using thermal evaporation technique, followed by air annealing at different temperatures from 200 to 500 °C. Structural analysis reveals that CdTe thin films have a cubic zincblend structure with two oxide phases related to CdTe 2 O 5 and CdTeO 3 at annealing temperature of 400 and 500 °C respectively. Regardless of the annealing temperature, the plane (111) was found to be the preferred orientation for all films. The crystallite size was observed to increase with annealing temperature. All films were found to display higher lattice parameters than the standard, and hence found to carry a compressive stress. Optical measurements suggest high uniformity of films both before and after post deposition heat treatment. Films annealed at 400 °C displayed superior optical properties due to its high refractive index, optical conductivity, relative density and low disorder. Furthermore, according to the compositional measurements, CdTe thin films were found to exhibit Te rich and Cd rich nature at regions near the substrate and center of the film respectively, for all annealing temperatures. However, composition of the regions near the substrate was found to become more Te rich with increasing annealing temperature. The study suggests that changing the annealing temperature as a post deposition treatment affects structural and optical properties of CdTe thin film as well as its composition. According to the observations, films annealed at 400 °C can be concluded to be the best films for photovoltaic applications due to its superior optical and structural properties.

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“…The CdTe layer growing time was 15 min for a CdTe thickness of 1.8 ± 0.05 m and for the thickness 3.10 ± 0.05 m 30 min was used. General properties of our CSS-CdTe films were already published [12]. The CdS layers were deposited by chemical bath (CB) following a procedure already reported [13], but the solution was prepared at different molar concentrations.…”

Section: Methodsmentioning

confidence: 99%

“…For the OC measurements, graphite contacts were employed with the purpose to avoid short circuits between TCO and back contact, due to the possible presence of pinholes, since graphite paste eliminates this problem. In addition, graphite is an ohmic contact on CdTe with no thermal treatment; however, low current densities are expected due to the lack of intimate contact between CdTe and graphite paste, because of the superficial roughness of CdTe [12]. For the current-voltage measurements, Au/Cu 2 Te back contacts were evaporated following a procedure reported [14].…”

Section: Methodsmentioning

confidence: 99%

Au/Cu2Te/CdTe/CdS/TCO/Glass Solar Cells withCdIn2<

Márquez‐Marín

Delgado

Frutis³

et al. 2014

International Journal of Photoenergy

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An Au/Cu2Te/CdTe/CdS/TCO/glass heterostructure based superstrate solar cells with 2.5 mm2of area, where the CdTe layer was prepared by means of closed spaced sublimation (CSS) and the CdS by chemical bath, reached an efficiencyηvalue of 12.1%. As transparent conductive oxide (TCO), a thin film of cadmium-indium oxide (CdIn2O4:CIO), obtained by sol-gel technique, was used. A systematic optimization of the thermal activation of the CdTe/CdS/CIO central part of the device with a CdCl2vapor ambient made the conversion efficiency of the Au/Cu2Te/CdTe/CdS/CIO/glass heterostructure reaches 9.94% for the CdTe layer with thickness of 1.8 μm. This efficiency was reached only through an open circuit voltageVOCoptimization. A maximumηof 12.1% was reached with the established procedure of optimization and when the CdTe layer thickness was increased to 3.1 ± 0.05 μm. The substitution of CIO by commercial ITO provoked in the cell a decrease ofηfrom 12.1% to 7.2%, both devices prepared under the same conditions. Starting from these results, we can say that CIO was a better TCO than commercial ITO in our solar cell, with the advantage that CIO was obtained by sol-gel, which is a simple and economical technique.

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Structural, morphological, optical and electrical properties of CdTe films deposited by CSS under an argon–oxygen mixture and vacuum

Cited by 31 publications

References 10 publications

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Au/Cu2Te/CdTe/CdS/TCO/Glass Solar Cells withCdIn2<

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