2013
DOI: 10.1016/j.mssp.2012.07.008
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Structural, morphological, electrical and optical studies of Cr doped SnO2 thin films deposited by the spray pyrolysis technique

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Cited by 39 publications
(13 citation statements)
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“…As mentioned about the absorption spectra, the decrease in the band gap can be ascribed to the formation of partial Cr x O y phases with the lower optical energy band gap compared with SnO 2 [51]. Such a decrease in the optical energy band gap for Crdoped SnO 2 nanostructures has also been reported by other researchers [52,53] and can be interpreted using equation (5) [54]…”
Section: Resultssupporting
confidence: 55%
“…As mentioned about the absorption spectra, the decrease in the band gap can be ascribed to the formation of partial Cr x O y phases with the lower optical energy band gap compared with SnO 2 [51]. Such a decrease in the optical energy band gap for Crdoped SnO 2 nanostructures has also been reported by other researchers [52,53] and can be interpreted using equation (5) [54]…”
Section: Resultssupporting
confidence: 55%
“…Recently, binary transparent oxides of n-type and p-type TCO materials have been developed such as n-Zn 2 SnO 4 [7,8], n-MgIn 2 O 4 [9], n-CdSb 2 O 6 :Y [10], n-ZnSnO 3 [11], p-CuAlO 2 [12], p-CuGaO 2 [13], p-SrCu 2 O 2 [14], p-ZnO:(Ga, N) [15] and p-NiO : Li [16,17]. Therefore, the use of n-type and p-type TCOs in the fabrication of active elements in optoelectronic devices as transparent p-n junctions is possible [18][19][20][21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Tin Oxide is an n-type semiconductor with wide band gap energy (Eg = 3.5-4 eV) [4]. Tin Oxide has a tetragonal structure.…”
Section: Introductionmentioning
confidence: 99%