Structural modifications of thin magnetic Permalloy films induced by ion implantation and thermal annealing: A comparison

Roshchupkina, Olga; Strache, Thomas; McCord, Jeffrey; Mücklich, A.; Bähtz, C.; Grenzer, J.

doi:10.1016/j.actamat.2014.04.040

Cited by 5 publications

(1 citation statement)

References 47 publications

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“…Several chips were thermally treated, Figure 9bc, with the purpose of enhancing the crystalline structures of the deposited layers and thus the electric conductivity. The thermal treatment was made in an argon (Ar, 99.99%) atmosphere, 2 mbarr pressure at a temperature of 450 • C for two hours [40].…”

Section: Fabrication Of Exchange Bias Amr Bridge Sensor Demonstratormentioning

confidence: 99%

Designing a Spintronic Based Magnetoresistive Bridge Sensor for Current Measurement and Low Field Sensing

et al. 2022

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An exchanged-biased anisotropic magnetoresistance bridge sensor for low currents measurement is designed and implemented. The sensor has a simple construction (single mask) and is based on results from micromagnetic simulations. For increasing the sensitivity of the sensor, the magnetic field generated by the measurement current passing through the printed circuit board trace is determined through an analytical method and, for comparative analysis, finite elements method simulations are used. The sensor performance is experimentally tested with a demonstrator chip. Four case studies are considered in the analytical method: neglecting the thickness of the trace, dividing the thickness of the trace in several layers, and assuming a finite or very long conductive trace. Additionally, the influence of several adjacent traces in the sensor area is evaluated. The study shows that the analytical design method can be used for optimizing the geometric selectivity of a non-contacting magnetoresistive bridge sensor setup in single trace, differential, and multi-trace (planar coil) configurations. Further, the results can be applied for developing highly performant magnetoresistance sensors and optimizations for low field detection, small dimensions, and low costs.

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Section: Fabrication Of Exchange Bias Amr Bridge Sensor Demonstratormentioning

confidence: 99%

Designing a Spintronic Based Magnetoresistive Bridge Sensor for Current Measurement and Low Field Sensing

et al. 2022

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Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

Heidarian

Bali

Grenzer

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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The modification of the structure of multilayer Co/Pt films by the irradiation with a focused helium ion beam

Гусев¹,

Дроздов²,

Ermolaeva³

et al. 2016

AIP Conference Proceedings

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Structural modifications of thin magnetic Permalloy films induced by ion implantation and thermal annealing: A comparison

Cited by 5 publications

References 47 publications

Designing a Spintronic Based Magnetoresistive Bridge Sensor for Current Measurement and Low Field Sensing

Designing a Spintronic Based Magnetoresistive Bridge Sensor for Current Measurement and Low Field Sensing

Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

The modification of the structure of multilayer Co/Pt films by the irradiation with a focused helium ion beam

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