Structural, magnetic, electronic, and spin transport properties of epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>001</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:mrow></mml:math>

Ionescu, Adrian M.; Vaz, C. A. F.; Trypiniotis, T.; Gürtler, C. M.; Garcı́a-Miquel, H.; Bland, J. A. C.; Vickers, M. E.; Dalgliesh, Robert M.; Langridge, S.; Bugoslavsky, Y.; Miyoshi, Yasuyuki; Cohen, L. F.; Ziebeck, K.R.A.

doi:10.1103/physrevb.71.094401

Cited by 129 publications

(90 citation statements)

References 65 publications

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“…Table 1 summarizes the anisotropy fields of both samples determined by FMR. The value of the fourfold anisotropy field for sample A s in good agreement to the bulk value of 55 Oe [10] or the value determined by Ionescu et al for a 21 nm thick stoichiometric sample [5]. In contrast, the uniaxial …”

Section: Resultssupporting

confidence: 81%

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Magnetic anisotropy and resonance linewidth of Fe₃Si/GaAs(001)

Lenz

Kosubek

Baberschke

et al. 2006

Phys. Status Solidi (c)

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The magnetic anisotropy energy and the resonance linewidth of epitaxial Fe3Si grown on GaAs(001) is studied by ferromagnetic resonance (FMR) technique. For a nearly stoichiometric sample (25.5% Si-content) a clear fourfold anisotropy is observed which is modulated by a small contribution of an uniaxial in-plane anisotropy. This uniaxial component is found to increase with the Fe concentration in the intermetallic compound. The samples show an exceptional narrow resonance linewidth of only 17 Oe at 9 GHz excitation frequency confirming the very high structural quality.

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Section: Resultssupporting

confidence: 81%

“…A promising candidate is the intermetallic compound Fe 3 Si which is of cubic D0 3 structure resembling a binary Heusler alloy [2][3][4][5]. This structure is almost lattice matched to the GaAs(001) substrate yielding the desired epitaxial growth and high interfacial perfection [3].…”

Section: Introductionmentioning

confidence: 98%

Magnetic anisotropy and resonance linewidth of Fe₃Si/GaAs(001)

Lenz

Kosubek

Baberschke

et al. 2006

Phys. Status Solidi (c)

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show abstract

“…More recently, Herfort et al [5,6] have established an optimized growth temperature range and fine tuned the Fe 3 Si composition. Ionescu et al [8] have reported extensive studies of structural, magnetic, electronic, and spin transport properties.…”

Section: Introductionmentioning

confidence: 99%

Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures

Hsu

Lee

Chang

et al. 2007

Journal of Crystal Growth

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“…The structural, transport, and magnetic properties of the Fe 3 Si/GaAs heterostructures have been studied [1][2][3][4][5][6][7]. Fe 3 Si is a ferromagnetic material that could be a promising candidate for injections of spin-polarized electrons from a ferromagnet into a semiconductor [8].…”

Section: Introductionmentioning

confidence: 99%