Structural, magnetic and transport properties of the quaternary Heusler alloy CoFeMnSn

Spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

“…10) and carrier concentration (Fig. 7) between our study and those of Xia et al 43 can be attributed to variations in growth conditions adopted in these two studies. Our study involved an extended annealing and quenching process, while Xia et al 43 employed a shorter annealing process and room-temperature cooling.…”

“…7) between our study and those of Xia et al 43 can be attributed to variations in growth conditions adopted in these two studies. Our study involved an extended annealing and quenching process, while Xia et al 43 employed a shorter annealing process and roomtemperature cooling. Annealing is known to significantly influence the properties of many Heusler alloy materials [64][65][66][67] including spin-gapless semiconductors (SGSs), 68,69 and these differences in growth conditions are responsible for the disparities in the values of carrier concentration and Hall resistivity reported in these two works.…”

“…S2 of the ESI †). It may be noted here that a recent study on CoFeMnSn 43 by Xia et al claimed the compound was half-metallic ferromagnetic. However, our focus is on the spin-gapless semiconducting properties of CoFeMnSn, which Xia et al's paper does not address.…”

Tailoring-compensated ferrimagnetic state and anomalous Hall effect in quaternary Mn–Ru–V–Ga Heusler compounds

“…For comparison, the anomalous Hall effect in epitaxial Fe, [46] Co [47] or L1 0 -Mn 1.5 Ga films [48] was found to be governed by the intrinsic mechanism, and the phonon-induced skew scattering can be ignored. Nonnegligible phonon skew scattering contribution was also reported in some Heusler alloys, [49][50][51] although we should note that the conductivity of these systems is in the "moderately dirty regime" with RRR that is close to 1 or even slightly less than 1. Therefore, we believe that it is unclear whether the changes in the anomalous Hall effect with temperature in these systems can be entirely attributed to the phonon-induced skew scattering.…”