1994
DOI: 10.1007/bf00323251
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Structural investigations of silicon-rich CVD-SiC

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Cited by 3 publications
(3 citation statements)
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“…For silicon carbide the Si/C ratio was about 1, for SiC with free silicon about 4. These results are in agreement with earlier EDX-measurements (Si/C = 3.5) [3]. The measured nitrogen profile shows the formation of a thin silicon nitride layer in the surface range of a few nanometers thickness.…”
Section: Resultssupporting
confidence: 93%
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“…For silicon carbide the Si/C ratio was about 1, for SiC with free silicon about 4. These results are in agreement with earlier EDX-measurements (Si/C = 3.5) [3]. The measured nitrogen profile shows the formation of a thin silicon nitride layer in the surface range of a few nanometers thickness.…”
Section: Resultssupporting
confidence: 93%
“…For the nitridation experiments SiC-layers (T= 1223K, ~=3) and SiC(Si)-layers (T= 1223K, ~= 18) were selected. The method of production has been exactly described elsewhere [3].These layers were subsequently nitrided in an NH 3 H 2 Ar atmosphere. The experimental conditions are summarized in Table 1.…”
mentioning
confidence: 99%
“…The chemical composition and crystal structure of CVD-SiC are strongly influenced by the H2/CH3SiC13 ratio (c 0 and the temperature. Silicon carbide with codeposited silicon was obtained by using a high H2/CH3SiC13 ratio (c 0 [3]. This codeposited silicon was subsequently converted to other compounds.…”
mentioning
confidence: 99%