Abstract:Abstract. Silicon Carbide (SIC) and SiC with free silicon [SiC(S0] thin films were prepared by chemical vapor deposition (CVD) using a CH3SiC13-H2-Ar gas mixture at a temperature of 1223 K. Afterwards these layers were gas nitrided in an ammonia-hydrogen-argon mixture at 1273 K. The solid product is an extremely thin film of silicon nitride on SiC or SiC(Si)-basic layers. These ultra thin silicon nitride films were investigated by glow discharge optical spectroscopy (GDOS) and x-ray photoelectron spectrosco… Show more
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