Structural investigation of monolayer Sb on Si(100)-2×1 utilizing a Monte Carlo simulation of channeling and channeled ion energy loss

Abstract

Preparation and structure of 1-8 monolayer thick epitaxial iron oxide films grown on Pt (111) Lowenergy electron diffraction intensity analysis of the atomic geometry of p(1×1) monolayers of bismuth on GaAs(110)The preferred bonding site of Sb on Si͑100͒ is investigated using transmission ion channeling. A Monte Carlo simulation that includes a model for channeled ion energy loss has been used to calculate scattering yields and energy distributions for trial adatom sites. A method of data collection and analysis was developed to use the calculated scattering yields and energy distributions for quantitative site determination. The Sb site thus found agrees well with previous experiments on this system, namely, the Sb is in a modified bridge site with a bond length of 2.80Ϯ0.10 Å and a distance above the bulk-extrapolated silicon surface of 1.63Ϯ0.10 Å. However, the vibrational amplitude necessary for the simulated energy distributions to match experiment is anisotropic, apparently in contradiction with other results. A possible resolution is proposed.

Effect of surface intermixing on the morphology of Sb-terminated Ge(100) surfaces

“…The interaction of Sb with Si and Ge͑100͒ has been studied using a number of techniques including x-ray and ultra-violet photoelectron spectroscopy, 10,12-15 surface x-ray diffraction, 16 LEED, 11,17,18 high energy electron diffraction, 10,12 STM, [17][18][19][20][21][22][23][24] scanning tunneling spectroscopy ͑STS͒, 20 ion channeling, 25 and x-ray absorption. 17 On Si͑100͒, most studies agree that deposition of Sb multilayers followed by annealing at elevated temperatures to remove all but one Sb layer results in a (2ϫ1) reconstructed surface.…”