Structural evolution and its effect on multiferroic properties in magnetoelectric 0.67Sm0.12Bi0.88FeO3–0.33BaTiO3 ceramics by tuning the cooling rate

Li, Y.; Wang, Y. G.; Zhou, Shuang; Wu, Hao

doi:10.1007/s10853-019-03404-z

Cited by 6 publications

(9 citation statements)

References 41 publications

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“…Compared with the BTFM-LFO-LMT film, the P r of the BTFM-LFO film is relatively higher at the same polarization voltage. It is well known that the higher polarization of materials is usually related to their low structural symmetry and high differences in unit cell parameters . Therefore, the difference in ferroelectricity between the two films may be due to different c/a ratios, resulting in the difference in the composition between the two films.…”

Section: Results and Discussionmentioning

confidence: 90%

“…It is well known that the higher polarization of materials is usually related to their low structural symmetry and high differences in unit cell parameters. 28 Therefore, the difference in ferroelectricity between the two films may be due to different c/a ratios, resulting in the difference in the composition between the two films. The frequency dependence of the relative dielectric permittivity (ε r ) and dielectric loss (tan δ) of both the binary film and ternary films was investigated at room temperature (Figure S2), with the measured frequency ranging from 10 2 to 10 6 Hz.…”

Section: Resultsmentioning

confidence: 99%

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Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Ming

Liu

et al. 2021

ACS Appl. Electron. Mater.

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Resistive switching in multiferroics has attracted increasing attention due to the potential application for next-generation nonvolatile memory and could lead to forms of computing. However, the resistive switching mechanism in solid solution oxides is unclear. In this article, we have successfully fabricated binary 0.72BiTi 0.27 Fe 0.46 Mg 0.27 O 3 -0.28LaFeO 3 (BTFM-LFO) and ternary 0.625BiTi 0.27 Fe 0.46 Mg 0.27 O 3 -0.25LaFeO 3 -0.125La 2 MgTiO 6 (BTFM-LFO-LMT) thin films with precise component control by the spin coating method. The solid solution films exhibit obvious ferroelectricity and magnetism at room temperature. Both binary and ternary solid solution films show switchable polarization, weak magnetism, and reversible and repeatable resistive switching effects. Multistage resistive switching behavior was observed. Four resistive switching states were obtained in the binary film; the highest I on/off is up to 10 6 . The influence of the film composition on the resistive switching effect was discussed. It is considered that the oxide vacancy/valance exchange-induced defects play a dominant role in the resistive switching effect of complex oxide thin films. This work provides an alternative pathway to explore the resistive switching in multiferroic oxides by fabrication of complex solid solution films.

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Section: Results and Discussionmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Ming

Liu

et al. 2021

ACS Appl. Electron. Mater.

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“…Ti 4+ (ionic radius r = 0.60 Å) and Fe 3+ ( r = 0.55 Å) have similar relative atomic masses and ionic radii; therefore, similar Raman shifts are expected for TiO 6 and FeO 6 vibrations. Bands at 466 and 559 cm –1 are, respectively, associated with the bending and stretching modes of the BO 6 octahedra. ,, Poling of the ceramics does not change the characteristics of the room-temperature Raman spectrum (Figure S5).…”

Section: Results and Discussionmentioning

confidence: 92%

“…Bands at 466 and 559 cm −1 are, respectively, associated with the bending and stretching modes of the BO 6 octahedra. 18,48,49 Poling of the ceramics does not change the characteristics of the room-temperature Raman spectrum (Figure S5).…”

Section: Resultsmentioning

confidence: 98%

“…The x = 0.33 (0.67BiFeO 3 –0.33BaTiO 3 , BF67BT33) composition lies at the morphotropic phase boundary (MPB) and exhibits a high Curie temperature ( T c ), high remnant polarization ( P r ), and good thermal stability. − However, the high leakage current in BFBT ceramics, due to the existence of oxygen vacancies generated by Fe 3+ → Fe 2+ reduction at high temperatures, impedes their piezoelectric applications . The insulating properties of BFBT can be improved by doping with a variety of elements, e.g., Cu, Mn, Nb, Zn, Cr, Co, Ga, La, Nd, Sm, and Gd. − Among these, Mn-modified BF67BT33 has shown significantly improved d 33 and resistance compared with unmodified ceramics. ,, …”

Section: Introductionmentioning

confidence: 99%

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Grain Size Effects in Mn-Modified 0.67BiFeO₃–0.33BaTiO₃ Ceramics

Yue

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

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Grain size can have significant effects on the properties of electroceramics for dielectric, piezoelectric, and ferroelectric applications. Here, we systematically investigate the effect of grain size on the structure and properties of Mn-modified 0.67BiFeO3–0.33BaTiO3 ceramics, an important lead-free piezoelectric ceramic that exhibits both a high piezoelectric coefficient and a high Curie point. Ceramics with average grain sizes ranging from 0.46 to 6.85 μm were prepared using conventional and spark plasma sintering. It was found that the morphotropic phase boundary compositions are composed of two polar structures, rhombohedral and tetragonal, with DC poling inducing an increase in the fraction of the rhombohedral phase. All ceramics show relaxor behavior and their freezing temperature moves to higher temperatures with increasing grain size, although their Burns temperature is independent of grain size. In fine-grained ceramics, which show pronounced relaxor behavior, significant grain size dependency is seen in dielectric, piezoelectric, and ferroelectric properties, which is attributed to the presence of single ferroelectric domains and high concentrations of polar nanoregions. In coarse-grained ceramics, a critical grain size of 2.83 μm yields the highest dielectric permittivity at room temperature, with the piezoelectric coefficient plateauing at this grain size, which can be attributed to the contribution of both polar nanoregions and high domain wall density.

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Optimization of multiferroic properties in BiFeO3–BaTiO3-based ceramics by tuning oxygen octahedral distortion

Zhou

Zhu

et al. 2019

J Mater Sci

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Structural evolution and its effect on multiferroic properties in magnetoelectric 0.67Sm0.12Bi0.88FeO3–0.33BaTiO3 ceramics by tuning the cooling rate

Cited by 6 publications

References 41 publications

Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Grain Size Effects in Mn-Modified 0.67BiFeO₃–0.33BaTiO₃ Ceramics

Optimization of multiferroic properties in BiFeO3–BaTiO3-based ceramics by tuning oxygen octahedral distortion

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Structural evolution and its effect on multiferroic properties in magnetoelectric 0.67Sm0.12Bi0.88FeO3–0.33BaTiO3 ceramics by tuning the cooling rate

Cited by 6 publications

References 41 publications

Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Grain Size Effects in Mn-Modified 0.67BiFeO3–0.33BaTiO3 Ceramics

Optimization of multiferroic properties in BiFeO3–BaTiO3-based ceramics by tuning oxygen octahedral distortion

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Grain Size Effects in Mn-Modified 0.67BiFeO₃–0.33BaTiO₃ Ceramics