Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

“…Relative mass г 0.75 [12] L 0.55 [12] X 0.30 [12] 0.15 [15] 0.60 [15] 0.50 [15] Energy (ev) г 9.94 [13] L 14.3 [13] X12.04 [13] 3.38 [15] 5.64 [15] 4.57 [15] e standard expressions. In our case, we consider a model ee valleys (Γ, L, X) [7], isotropic but not parabolic, in order rmine the evolution of the scattering, electronic energy ft velocity in the ternary material B x Ga (1-x) N for different ompositions at x=50% for different temperatures.…”

Section: Parameters Bn Ganmentioning

confidence: 99%

“…Relative mass г 0.75 [12] L 0.55 [12] X 0.30 [12] 0.15 [15] 0.60 [15] 0.50 [15] Energy (ev) г 9.94 [13] L 14.3 [13] X12.04 [13] 3.38 [15] 5.64 [15] 4.57 [15] …”

Section: Bn Ganmentioning

confidence: 99%

Section: Polar Optical Scatteringsmentioning

confidence: 99%

“…Therefore, the phonon temperature cannot be neglected compared with that of electrons and the collisions become inelastic. The probability of scattering per X 0.30 [12] 0.15 [15] 0.60 [15] 0.50 [15] Energy (ev) with three valleys (Γ, L, X) [7], isotropic but not parabolic, in order to determine the evolution of the scattering, electronic energy and drift velocity in the ternary material B x Ga (1-x) N for different boron compositions at x=50% for different temperatures.…”

Section: Polar Optical Scatteringsmentioning

confidence: 99%

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Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

Bouchefra¹,

Sari²

2017

Transactions on Electrical and Electronic Materials

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This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound B x Ga (1-x) N and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions (B x Ga (1-x) N), at various temperatures for B 0.5 Ga 0.5 N. Monte carlo simulation, was employed and the three valleys of the conduction band (Γ, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in B x Ga (1-x) N alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

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Electronic Band Structure and Polarization Effects

Morkoç̌

2008

Handbook of Nitride Semiconductors and Devices

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Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

Cited by 139 publications

References 63 publications

A First Principles Alloy Scattering Approach for Monte Carlo Hole Mobility Calculations

A First Principles Alloy Scattering Approach for Monte Carlo Hole Mobility Calculations

Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

Electronic Band Structure and Polarization Effects

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