2004
DOI: 10.1007/s10825-004-7075-4
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A First Principles Alloy Scattering Approach for Monte Carlo Hole Mobility Calculations

Abstract: We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.

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Cited by 2 publications
(6 citation statements)
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“…32 In Fig. (7) we show three calculations for the LDA bandstructure of Li 4 (middle panels) and Li 3 Mg 1 (top panels), calculated with the use of LMTO. 31 The calculations all correspond to different ordered structures of the same chemical composition.…”
Section: Ab Initio Resultsmentioning
confidence: 99%
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“…32 In Fig. (7) we show three calculations for the LDA bandstructure of Li 4 (middle panels) and Li 3 Mg 1 (top panels), calculated with the use of LMTO. 31 The calculations all correspond to different ordered structures of the same chemical composition.…”
Section: Ab Initio Resultsmentioning
confidence: 99%
“…On the bottom of Fig. (7) we show the total energy of the 3 different super cell calculations per site, with respect to the energy of the lowest energy state. The material studied will be grown or annealed at a certain temperature, where one can assume the system to be in thermal equilibrium.…”
Section: Ab Initio Resultsmentioning
confidence: 99%
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