Structural, electrical and optical properties of boron doped ZnO thin films using LSMCD method at room temperature

Conductivity enhancement by fluorine doping in boron-doped ZnO thin films deposited by the electrospraying method

“…In addition, such preferred basal orientation is typically observed in the previously reported Al-doped ZnO films for doping ranges 1-4 at% and 1-5 at%, and the substrate temperature of 450 1C [33,34]. Furthermore, our results agree well with previously reported studies [35][36][37].…”

Boron doped nanostructure ZnO films onto ITO substrate

“…The same tendency was also observed by Kim et al [14]. It was seen that boron doping resulted in an interstitial inclusion of dopant atoms, which resulted in a deterioration of the film structure.…”

“…Although there is not too much works about boron doped ZnO films [14][15][16][17][18], there is only a few study related to boron doped ZnO deposited by sol-gel method in among of them. Tahar and Tahar [19] used sol-gel dip coating method and investigated the electrical and optical properties of multilayer transparent conducting boron doped ZnO films according to various deposition parameters.…”

The role of pH and boron doping on the characteristics of sol gel derived ZnO films

“…In the case of B doping (which is trivalent), the concentration of the zinc interstitials is reduced for charge compensation, resulting in suppressed ZnO grain growth and deteriorated crystallinity [25]. The similar XRD features for B doped ZnO films have been observed by Addonizio and Diletto [17] using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique and Kim et al [26] using liquid source misted chemical vapor deposition (LSMCD) method.…”

“…It is seen that the intensities of (0 0 2) peaks decrease with increasing doping ratio. When differently sized atoms are substituted in the ZnO lattice, some lattice defects and distortion of the crystal lattice may occur [26]. The XRD result suggests that the incorporation of boron atoms leads to a suppression of the crystal growth along the c-axis.…”