Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

Gürbüz, Osman; Okutan, Mustafa

doi:10.1016/j.apsusc.2016.06.114

Cited by 57 publications

(12 citation statements)

References 46 publications

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“…The reduction in size may be due to lattice distortion of the ZnO crystal structure due to incorporation of smaller size Cr atom into ZnO lattice [58]. Similar result is also reported by a number of researchers [57,[59][60][61] The lattice strain was increased after Cr doping but by increasing the Cr concentration it was found to be decreased. The result is quite similar as observed by Santi Septiani et al [56].…”

Section: Methodssupporting

confidence: 66%

Structural and Electrical Properties of Zn1-xCrxO NTCR Nanoceramics Synthesized by High Energy Ball Milling

Das

Das²,

Parashar

et al. 2021

Preprint

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Cr doped ZnO (x = 0-0.04) nanoceramics was successfully synthesized by high energy ball milling (HEBM) technique. The structural and electrical properties of the synthesized sample has been studied in detail. The doping of Cr into ZnO has been verified by X-ray diffraction (XRD) and also from the variation in structural parameters. Rietveld refinement XRD pattern of calcined sample showed the hexagonal wurtzite structure and it did not induce impurity phases. From the XRD, it has been confirm that maximum result confirms that up to 4 atomic% of Cr can be doped into ZnO. The strain of the sample reduced with increase in particle size. After sintering, there is a growth of particle size of Cr doped ZnO sample. The impedance spectroscopy data shows a single semicircle in the high frequency region corresponding to the bulk properties of the nanoceramic sample. The decrease in real part of the impedance with temperature suggests the NTCR behavior of the sample in the temperature range of 300-500 ºC. The temperature dependent relaxation phenomena are also observed for the synthesized ceramic sample at high temperature. Distributed relaxation time suggests that the relaxation in the synthesized samples is of non-Debye type. The equivalent electrical circuit of the semicircular pattern in the impedance spectrum of ZnO and Zn1-xCrxO nanoceramics sample is a parallel combination of bulk resistance (Rb) and bulk capacitance (Cb).

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Section: Methodssupporting

confidence: 66%

Structural and Electrical Properties of Zn1-xCrxO NTCR Nanoceramics Synthesized by High Energy Ball Milling

Das

Das²,

Parashar

et al. 2021

Preprint

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“…Intrinsic ZnO, belongs to a polar semiconductor, presents n-type conductivity and contains many intrinsic defects. At present, the electrical and optical performances of ZnO can be greatly improved by doping impurity elements into the crystal lattice 6 7 8 , which contributes to increase the electron concentration in the conduction band of ZnO, as well as improves its transparency and stability in the visible-near-infrared region. Abduev et al .…”

mentioning

confidence: 99%

Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET–ITO flexible substrates by hydrothermal method

Wang

2017

Sci Rep

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Boron-doped zinc oxide sheet-spheres were synthesized on PET–ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET–ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET–ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET–ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

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“…These were attributed to reducing the grain sizes due to the doped Cr in the host ZnO film. Interestingly, this form of the electrical resistivity reduction in (Cr:ZnO) may be applied in the ReRAM process and the microwave devices [145]. Also reported that Cr-doped ZnO function in dye contamination as impurity remover in water and enhance antibacterial activity was revealed by Cr 3+ in ZnO nanoparticles [146], [147].…”

Section: Figurementioning

confidence: 94%

“…Improved electrical performance decreases the dielectric values and increases the loss of tangents [145]. These were attributed to reducing the grain sizes due to the doped Cr in the host ZnO film.…”

Section: Figurementioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

Cited by 57 publications

References 46 publications

Structural and Electrical Properties of Zn1-xCrxO NTCR Nanoceramics Synthesized by High Energy Ball Milling

Structural and Electrical Properties of Zn1-xCrxO NTCR Nanoceramics Synthesized by High Energy Ball Milling

Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET–ITO flexible substrates by hydrothermal method

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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