2016
DOI: 10.1007/s10854-016-6058-0
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Structural, dielectric and magnetic properties of (Al, Ni) co-doped ZnO nanoparticles

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Cited by 27 publications
(5 citation statements)
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“…Metal oxide semiconductors such as TiO 2 , SnO 2 , In 2 O 3 , and ZnO are known to exhibit DMS behavior as a result of TM-doping [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 ]. Thanks to its fascinating features, such as large energy bandgap E g (≈3.37 eV), relatively great exciton binding energy (≈60 meV), high electrical conductivity, as well as high temperature magnetic response [ 24 , 25 , 26 ], ZnO material is a II-VI binary semiconducting material and is considered to be one of the best candidates for the modern electronic industry. ZnO crystallizes in three main crystallographic varieties—namely, wurtzite, zinc blend, and rock salt.…”
Section: Introductionmentioning
confidence: 99%
“…Metal oxide semiconductors such as TiO 2 , SnO 2 , In 2 O 3 , and ZnO are known to exhibit DMS behavior as a result of TM-doping [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 ]. Thanks to its fascinating features, such as large energy bandgap E g (≈3.37 eV), relatively great exciton binding energy (≈60 meV), high electrical conductivity, as well as high temperature magnetic response [ 24 , 25 , 26 ], ZnO material is a II-VI binary semiconducting material and is considered to be one of the best candidates for the modern electronic industry. ZnO crystallizes in three main crystallographic varieties—namely, wurtzite, zinc blend, and rock salt.…”
Section: Introductionmentioning
confidence: 99%
“…Although the systems were excited above their band gap, no band edge emission was observed. The broad emission thus shows the presence of non-radiative states below the conduction band which can be due the presence of defects like Sn-interstitials, oxygen-interstitials and surface defects [33][34][35][36]. In metal oxide nanoparticles oxygen vacancies are the most prominent defects.…”
Section: Photoluminescence Spectroscopymentioning
confidence: 99%
“…The decrease of imaginary part of dielectric constant is due to the space charge polarization occurring at higher frequencies. [64] The phase difference, with the applied field leading to the drop in the dielectric value, is known as loss factor tangent [65] tan δ = ε /ε . (8) 048202-6 The variations of loss tangent with log frequency in Fig.…”
Section: Conductivity Studies 41 Impedance Analysismentioning
confidence: 99%
“…It is also observed that dielectric loss decreases with Fe doping concentration increasing, hence Fe doping concentration above the solubility limit in SnO 2 can get a material suitable for high frequency applications. [64] The variations of alternating current (AC) conductivity with log frequency for SnO 2 and 5-wt% and 10-wt% Fe-doped SnO 2 are shown in Fig. 14.…”
Section: Conductivity Studies 41 Impedance Analysismentioning
confidence: 99%