After growing successfully TaP single crystal, we measured its longitudinal resistivity (ρxx) and Hall resistivity (ρyx) at magnetic fields up to 9T in the temperature range of 2-300K. It was found that at 2K its magnetoresistivity (MR) reaches to 3.28×105 %, at 300K to 176% at 8T, and both do not appear saturation. We confirmed that TaP is indeed a low carrier concentration, hole-electron compensated semimetal, with a high mobility of hole µ h =3.71×105 cm 2 /V s, and found that a magnetic-field-induced metal-insulator transition occurs at room temperature. Remarkably, as a magnetic field (H ) is applied in parallel to the electric field (E ), the negative MR due to chiral anomaly is observed, and reaches to -3000% at 9T without any signature of saturation, too, which distinguishes with other Weyl semimetals (WSMs). The analysis on the Shubnikov-de Haas (SdH) oscillations superimposing on the MR reveals that a nontrivial Berry's phase with strong offset of 0.3958 realizes in TaP, which is the characteristic feature of the charge carriers enclosing a Weyl nodes. These results indicate that TaP is a promising candidate not only for revealing fundamental physics of the WSM state but also for some novel applications. [8] compound, in which fine-tuning the chemical composition is necessary for breaking inversion symmetry, a WSM has not realized experimentally in any of these compounds due to either no enough large magnetic domain or difficulty to tune the chemical composition within 5%. Very recently, the theoretical proposal [9,10] for a WSM in a class of stoichiometric materials, including TaAs, TaP, NbAs and NbP, which break crystalline inversion symmetry, has been soon confirmed by the experiments [11][12][13][14], except for TaP due to difficulty to grow large crystal. The exotic transport properties exhibiting in these materials ignite an extensive interesting in both the condensed matter physics and material science community, especial for their extremely large magnetoresistance (MR) and ultrahigh mobility of charge carriers.Materials with large MR have been used as magnetic sensors [16], in magnetic memory [17], and in hard drives [18] at room temperature. Large MR is an uncommon property, mostly of magnetic compounds, such as a giant magnetoresistance (GMR) [19] emerging in Fe/Cr thin-film, and colossal magnetoresistance (CMR) in the manganese based perovskites [20,21]. In contrast, ordinary MR, a relatively weak effect, is commonly found in non-magnetic compounds and elements [22]. Magnetic materials typically have negative MR. Positive MR is seen in metals, usually at the level of a few percent, and in some semiconductors, such as 200% at room temperature in Ag 2+δ (Te,Se) [30], comparable with those of materials showing CMR [24], and semimetals, such as high-purity bismuth, graphite [25], and 4.5×10 4 % in WTe 2 [26]. In the semimetals, very high MR is attributed to a balanced hole-electron "resonance" condition, as described in Ref. [26]. WSM provides another possibility to realize extremely large MR, ...

We have made the first observation of superconductivity in TlNi2Se2 at T(C)=3.7  K, and it appears to involve heavy electrons with an effective mass m*=(14-20)m(b), as inferred from the normal-state electronic specific heat and the upper critical field, H(C2)(T). We found that the zero-field electronic specific-heat data, C(es)(T) (0.5  K≤T<3.7  K) in the superconducting state can be fitted with a two-gap BCS model, indicating that TlNi2Se2 seems to be a multiband superconductor, which is consistent with the band calculation for the isostructural KNi2S2. It is also found that the electronic specific-heat coefficient in the mixed state γN(H) exhibits a H(1/2) behavior, which is considered as a common feature of the d-wave superconductors. TlNi2Se2, as a d-electron system with heavy electron superconductivity, may be a bridge between cuprate- or iron-based and conventional heavy-fermion superconductors.

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Electronic devices featuring the biomimetic behaviours as an electronic synapse and neuron have motivated the emergence of a new era in information and humanoid robotics technologies. In the human body,...

In advanced computing technologies, metal oxide-based resistive switching random access memory (RRAM) has been considered an excellent scientific research interest in the area of information storage and in-memory computing. Herein,...

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This study presents some physical properties of fluoroperovskite NaQF3 (Q = Ag, Pb, Rh, and Ru) compounds computed with the help of the firstprinciple study. Fundamental structural features, ie, basic structural parameters, are investigated and reported, including the lattice constant, bulk modulus, and its pressure derivative. The compounds of interest are founded to be structurally stable. The Goldschmidt's tolerance factor (τ) is an indicator for the stability and distortion of perovskites crystal structures; it is found that τ is 0.951 for NaAgF 3 , 0.954 for NaPbF 3 , 0.934 for NaRhF 3 , and 0.971 for NaRuF 3 ; therefore, NaQF3 (Q = Ag, Pb, Rh, and Ru) are stable fluoroperovskites. Elastic properties are computed, and it is examined that all the compounds are elastically stable, anisotropic, and ductile. For all these materials, the electronic band structure and density of states in both spin-up and spin-down schemes are simulated and presented. In the spin-up scheme of NaAgF3 material, an indirect bandgap of 2.54 (eV) exists from M -Γ, while in the spin-down scheme, NaAgF3 has no bandgap. Bandgap of 1.44 (eV) for NaRhF3 exist in spin-down configuration and an overlapping pattern in spin-up case, which confirms the spin-polarized behavior at