2010
DOI: 10.3938/jkps.57.812
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Structural Design for Enhanced Light Extraction in Light Emitting Diodes with Nano-patterned n-GaN

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Cited by 4 publications
(3 citation statements)
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“…The light trapped by total internal reflection because of a large refractive index difference between the encapsulant and phosphor is a fundamental limiting factor of light extraction efficiency in LED packages . The critical angle of total internal reflection can be written using Snell's law asnormalθnormalcrit=arcsin1.623em1.623emtrue(n2n11.623em1.623emtrue)where n 1 and n 2 are the refractive indices of the phosphor and encapsulant, respectively. With the critical angle, it is possible to consider the region in the LED package through which light escapes into the air, and this region is called the light escape cone.…”
Section: Resultsmentioning
confidence: 99%
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“…The light trapped by total internal reflection because of a large refractive index difference between the encapsulant and phosphor is a fundamental limiting factor of light extraction efficiency in LED packages . The critical angle of total internal reflection can be written using Snell's law asnormalθnormalcrit=arcsin1.623em1.623emtrue(n2n11.623em1.623emtrue)where n 1 and n 2 are the refractive indices of the phosphor and encapsulant, respectively. With the critical angle, it is possible to consider the region in the LED package through which light escapes into the air, and this region is called the light escape cone.…”
Section: Resultsmentioning
confidence: 99%
“…The light trapped by total internal reflection because of a large refractive index difference between the encapsulant and phosphor is a fundamental limiting factor of light extraction efficiency in LED packages. 5,10 The critical angle of total internal reflection can be written using Snell's law as 25,26 h crit ¼ arcsin…”
Section: Resultsmentioning
confidence: 99%
“…To obtain accurate simulation results, the spatial grid size must be small enough to resolve the smallest feature of the field, as well as represent the objects to be simulated [24]. In this Letter, we impose the condition Δ x ≤ ( λ o / n )/15, where Δ x , λ o and n are the spatial grid size, central wavelength of light and refractive index of the semiconductor material, respectively [25]. We use Δ t ≤ (Δ x / c )/2 for the temporal grid size, where c is the velocity of light.…”
Section: Numerical Simulation Proceduresmentioning
confidence: 99%