Structural dependence of intersubband absorption of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP

Katayama, Takahiro; Kawamura, Y.; Takasaki, Hideki; Yamamoto, Akiko; Inoue, Naohisa

doi:10.1016/s0022-0248(99)00596-5

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…Using the data of Krijn [11], -edge conduction band offsets of 0.285 and 1.416 eV are calculated for the type-II heterostructures of GaInAs-GaAsSb and GaInAs-AlAsSb, respectively. Experimental results, however, show higher -edge conduction band offsets of 0.360 eV [12] and 1.740 eV [13], respectively. From the experimental data, we calculate the -edge conduction band energy versus the -edge bandgap energy of the quaternary alloys GaInAsP, AlGaInAs and AlGaAsSb by linear interpolation with respect to GaInAs.…”

Section: Modelmentioning

confidence: 75%

Optimization of type-II heterostructures for the tuning region in tunable laser diodes

Rosel¹,

Köhler²,

Meyer³

et al. 2003

Semicond. Sci. Technol.

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Type-II superlattices are very attractive as tuning regions in tunable laser diodes exploiting the free-carrier plasma effect. Due to the confining of the electrons and holes in different layers, the recombination of the electron-hole pairs is drastically suppressed. As a result, the carrier density, and hence the tuning efficiency for type-II superlattices, is enhanced by more than an order of magnitude in the small current regime as compared to bulk tuning regions. However, with increasing carrier density the recombination rate increases because of the stronger penetration of the electron and hole wavefunctions into the corresponding barriers. For high carrier densities, the capability of type-II superlattices depends critically on design parameters such as as layer thickness, band offset and strain. Our calculations show that, for an optimized type-II superlattice, the tuning range can be significantly enhanced by more than a factor of 3 for a given current.

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Section: Modelmentioning

confidence: 75%

Optimization of type-II heterostructures for the tuning region in tunable laser diodes

Rosel¹,

Köhler²,

Meyer³

et al. 2003

Semicond. Sci. Technol.

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show abstract

“…Accurate measurements of the VBO at heterojunctions combining GaAsSb with GaInAs and AlInAs have also been performed. 537,541,[820][821][822] In Ref. 823, the CBO appears reliable, but the VBO was determined incorrectly, the accurate result being 0.48 eV.…”

Section: Strained Inasõgaasõinp and Related Ternariesmentioning

confidence: 99%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,604

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy

Kawamura¹,

Kondô²,

Fujimoto³

et al. 2002

Journal of Crystal Growth

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Structural dependence of intersubband absorption of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP

Cited by 4 publications

References 6 publications

Optimization of type-II heterostructures for the tuning region in tunable laser diodes

Optimization of type-II heterostructures for the tuning region in tunable laser diodes

Band parameters for III–V compound semiconductors and their alloys

In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy

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