In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy

Kawamura, Y.; Kondô, Atsushi; Fujimoto, Masato; Higashino, Toshiyuki; Takasaki, Hideki; Naito, Hiroyoshi; Inoue, Naohisa

doi:10.1016/s0022-0248(01)02363-6

Journal of Crystal Growth

2002

DOI: 10.1016/s0022-0248(01)02363-6

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In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy

Y. Kawamura¹,

Atsushi Kondô²,

Masato Fujimoto³

et al.

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2011

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Cited by 2 publications

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“…We previously reported an InGaAs/ GaAsSb/InAlAs asymmetric quantum well structure. 4) In this structure, a large change in the wave function overlap of electrons and holes is expected by applying an opposite electric field. However, this InGaAs/GaAsSb/InAlAs asymmetric quantum well structure essentially has a type II band alignment.…”

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confidence: 93%

Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates

Kawamura

Shono

2011

Jpn. J. Appl. Phys.

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An InGaAsP/InAlAs/InP asymmetric quantum well structure was proposed and fabricated, where a large change in the wave function overlap of electrons and holes can be expected with the application of a low voltage. It was demonstrated by using photocurrent measurements that a large absorption change can be realized by applying a bias within ±1 V. The observed absorption change was caused by a large change in the wave function overlap of electrons and holes with the application of an opposite electric field.

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confidence: 93%

Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates

Kawamura

Shono

2011

Jpn. J. Appl. Phys.

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Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates

Kawamura¹,

Shono²

2011

Jpn. J. Appl. Phys.

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In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy

Cited by 2 publications

References 10 publications

Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates

Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates

Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates

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