Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress

Metastable group II sulphides grown by MBE: surface morphology and crystal structure

“…2. Similar ridge structures have also been observed in other materials with the epitaxial layers under tensile strain, for example InAlAs [18] and InGaAs [19][20][21] grown on InP. In these alloys, tensile strain is found to cause significant anisotropy within the layers, with relaxation occurring preferentially along [1 1 0] rather than ½11 0 [18,20,21].…”

Electron Microscopy of Cracks in InxGa1-xAs/GaAs(001) Multi-Quantum Wells

“…Their observation indicated that the crack could move on dierent planes. Salviati et al [16] reported the strain relaxation mechanisms in In x Ga 1−x As/InP heterostructures under tensile and compressive strain. They demonstrated that the cracks, which have exhibited a dierent density along [110] and [110] depending on the residual strain, occurred after growth, and however, that the cracks did not have an important contribution to the strain relaxation inside the structures.…”

Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part II. Application to InxGa1−xAs/InP system

“…Only recently has cracking in III-V epitaxial layers attracted greater attention (Dieguez et al, 1997;Wu and Weatherly, 1999;Murray et al, 2000;Natali et al, 2000;Salviati et al, 2002). In one notable study, the critical thickness criterion based on an energy balance was used to predict the onset of cracking (Thouless, 1990).…”