Structural characteristics of titanium coating on copper substrates

Abstract

The growth characteristics of titanium films deposited on glass, silicon (100) and oxygen free high purity copper substrate using magnetron sputtering have been investigated using X-ray diffraction, electron microscopy and scratch indentation techniques. The study of interface between the titanium film and the substrate was carried out to determine coating thickness, as well as intermixing of the elements at the interface. Studies revealed that the interface is free from voids and intermixing of the film and the substrate. Microstructural and diffraction analysis showed that the Ti coating was polycrystalline and exhibited columnar growth. The Ti crystallite size varied between 24 and 58 nm depending on the substrate. The thickness of the films were typically about 4 μm. Scratch test indicated that the films are adherent and the first critical load to failure was observed to be 4·5 N ± 2 N.

Effect of Scanning Speed on the Surface Roughness of Laser Metal Deposited Copper on Titanium Alloy

“…No voids were observed at the thickness of the coatings between the interface of the titanium film and the substrate. The coatings on the copper substrate were even as compared to other substrates but the deposition did not show preferred orientation and intensity 8 . Graded interface was developed by depositing a thin copper layer on titanium alloy (Ti6Al4V) substrate prior to several laser cladding of cobalt on it.…”

Microstructural Studies on Ti–Y2O3 Interface Reaction Products

“…EDS analysis was carried out at an accelerating voltage of 10 kV, since the characteristic X-ray energies for Ti-K a and Y-L a were only 4.5 and 1.92 keV, respectively. A Philips CM 200 analytical transmission electron microscope (ATEM) was employed for studying the cross-section of the specimen prepared manually as explained elsewhere [11]. The studies were carried out at an accelerating voltage of 200 kV and the phases were analysed by selected area diffraction (SAD).…”

Substrate bias voltage and deposition temperature dependence on properties of rf-magnetron sputtered titanium films on silicon (100)

“…Song et al (2007) observed that the substrate and substrate to target distance had influenced the preferential orientation and roughness of Ti grains grown by rf sputtering. Recently, Dasgupta et al (2011) studied growth of Ti films on Cu, glass and Si substrates. Polycrystalline films with fine Ti grain size were found to grow on Cu substrates.…”