2014
DOI: 10.1007/s12034-014-0722-x
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Substrate bias voltage and deposition temperature dependence on properties of rf-magnetron sputtered titanium films on silicon (100)

Abstract: Thin films or a coating of any sort prior to its application into real world has to be studied for the dependence of process variables on their structural and functional properties. One such study based on the influence of substrate conditions viz. substrate-bias voltage and substrate temperature on the structural and morphological properties, could be of great interest as far as Ti thin films are concerned. From X-ray texture pole figure and electron microscopy analysis, it was found that substrate bias volta… Show more

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Cited by 12 publications
(4 citation statements)
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“…The thermodynamically polar and electrochemically stable pure MgF 2 region with evenly dispersed pores as pathways for the Zn ions can relieve the de-solvation barrier of the Zn ions and improve the HER resistance of the Zn metal, thereby lowering the interfacial resistance of the Zn metal electrode. Additionally, the distinctively gradient Zndoping conformation formed by the interdiffusion mechanism during the sputtering process [23][24][25][26][27]; enhances the Zn ion transfer kinetics owing to an electrostatic driving force caused by Maxwell-Wagner polarization between Zndoping and MgF 2 matrix [19,28]; it also guides the Zn ion deposition by the high concentration of doping of fine Zn nucleation centers on the surface of the Zn metal substrate [29,30]. Consequently, the L-ZMF passivation layer coated Zn metal (Zn@L-ZMF) is an ideally stable Zn metal anode for Zn-based high-performance batteries.…”
Section: Introductionmentioning
confidence: 99%
“…The thermodynamically polar and electrochemically stable pure MgF 2 region with evenly dispersed pores as pathways for the Zn ions can relieve the de-solvation barrier of the Zn ions and improve the HER resistance of the Zn metal, thereby lowering the interfacial resistance of the Zn metal electrode. Additionally, the distinctively gradient Zndoping conformation formed by the interdiffusion mechanism during the sputtering process [23][24][25][26][27]; enhances the Zn ion transfer kinetics owing to an electrostatic driving force caused by Maxwell-Wagner polarization between Zndoping and MgF 2 matrix [19,28]; it also guides the Zn ion deposition by the high concentration of doping of fine Zn nucleation centers on the surface of the Zn metal substrate [29,30]. Consequently, the L-ZMF passivation layer coated Zn metal (Zn@L-ZMF) is an ideally stable Zn metal anode for Zn-based high-performance batteries.…”
Section: Introductionmentioning
confidence: 99%
“…Strengthening the texture of the Ti underlayer leads to the strengthening the texture and, consequently, to improvement in the performance properties of films and multilayer systems deposited on it [1,2]. In order to change the texture of the Ti films, the parameters of the deposition processes are varied, in particular, ion bombardment of the growing film is used [3,4]. At the same time, the authors did not find any works devoted to the effect of low-energy ion bombardment on the texture of Ti films, after their deposition.…”
mentioning
confidence: 99%
“…Усиление текстуры подслоя Ti приводит к усилению текстуры, а следовательно, улучшению эксплуатационных свойств пленок и многослойных систем, осаждаемых на него [1,2]. С целью изменения текстуры пленок Ti варьируются параметры процессов осаждения, в частности применяется ионная бомбардировка растущей пленки [3,4]. При этом авторами не найдено работ, посвященных влиянию на текстуру пленок Ti низкоэнергетической ионной бомбардировки, проводимой после их осаждения.…”
unclassified
“…Во время ИПО давление Ar в реакторе было 0.08 Pa, ВЧ-мощность, подаваемая на индуктор, была равна 800 W, расход Ar составлял 10 sccm, плотность ионного тока была равна 7. 4 [9,10], для пленки Ti с текстурой (100) минимальна энергия упругой деформации [3,9,10]. Таким образом, увеличение доли (100)-ориентированных зерен с ростом толщины пленки, вероятно, происходит из-за увеличения энергии упругой деформации.…”
unclassified