Structural and Physical Characteristics of PECVD Nanocrystalline Silicon Carbide Thin Films

Huran, J.; Valovič, A.; Kobzev, A.P.; Balalykin, N.I.; Kučera, M.; Hašc̆ı́k, Š.; Malinovský, Ľ.; Kováčová, Eva

doi:10.1016/j.phpro.2012.03.560

Cited by 2 publications

(3 citation statements)

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“…Moreover, for the 1:1 and 1:2 VPDMS/DVB copolymers, the pDVB-related stretching band at ∼1350 cm –1 (band v) is significantly reduced, and there is also a slight increase in the band around 1000 cm –1 (band iiD), assigned to the Si–(CH 2 ) n –Si stretching vibration. An increase of the band assigned to Si–(CH 2 ) n –Si between 400 and 600 °C was also observed by Breuning during the heat treatment of a polysilazane polymer, and it can be attributed to the rearrangement of bonds to form carbon bridges between silicon atoms. The higher incorporation of DVB monomers in the 1:1 and 1:2 VPDMS/DVB copolymers seems to have led to a larger increase in the formation of hydrocarbon bridges, while no such bridges are observed forming for the 2:1 VPDMS/DVB copolymer, which has less DVB incorporated in its structure.…”

Section: Resultsmentioning

confidence: 61%

“…18 Huran et al deposited SiC films on silicon wafers via PECVD using SiH 4 and CH 4 with flow rates of 10 and 40 sccm, respectively, and a deposition temperature of 450 °C. 19 Similarly, Wei et al deposited amorphous SiC films on silicon wafers using SiH 4 , CH 4 , and Ar with flow rates of 70, 500, and 700 sccm, respectively, a deposition temperature of 400 °C, and plasma power of 600 Watts. 20 Despite its success in preparing SiC films, high-energy PECVD has a number of shortcomings.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Previously, Pagès et al deposited, via high-energy PECVD, SiC membrane films on porous alumina tubes using diethylsilane as a precursor, Ar as the ionizing gas, and employing a substrate temperature of 300 °C . Huran et al deposited SiC films on silicon wafers via PECVD using SiH 4 and CH 4 with flow rates of 10 and 40 sccm, respectively, and a deposition temperature of 450 °C . Similarly, Wei et al deposited amorphous SiC films on silicon wafers using SiH 4 , CH 4 , and Ar with flow rates of 70, 500, and 700 sccm, respectively, a deposition temperature of 400 °C, and plasma power of 600 Watts .…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of SiC-Type Films Using Low-Energy Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Subsequent Pyrolysis

Nguyen

Tabarkhoon

Welchert

et al. 2023

Ind. Eng. Chem. Res.

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Silicon carbide (SiC) is a promising material for a variety of applications in the biomedical, aerospace, and energy industries. Solution-phase techniques have long been used to deposit precursor films prior to pyrolysis into SiC, but they tend to face difficulties with substrate compatibility and the use of toxic solvents. In this study, we introduce a solventless synthesis route for fabricating SiC-type films by depositing an organosilicon copolymer poly(vinylphenyldimethylsilane-co-divinylbenzene) (p(VPDMS-co-DVB)) film using low-energy plasma chemical vapor deposition (PECVD) followed by subsequent pyrolysis. The chemical structure of the film was systematically studied in situ during pyrolysis as a function of temperature using diffuse reflection infrared Fourier transform spectroscopy (DRIFTS). The majority of the functional groups were found to have disappeared by a temperature of 800 °C, with most of the mass loss occurring between 350 and 520 °C. Thermogravimetric analysis (TGA) was used to measure the loss of mass as the pyrolysis temperature was increased, and the observed pyrolysis rates were compared to estimates of such rates from the DRIFTS analysis. Our proposed synthesis route provides a scalable and solventless method of producing SiC-type ceramic films for such applications as high-temperature sensors and membranes.

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Section: Resultsmentioning

confidence: 61%