We have exanlined the properties of thin epitaxial C e Q films prepared by aerosol MOCVD. The films were deposited on (li02) sapphire at deposition temperatures between 500 "C and 900 "C. The best properties were observed for the film grown at high deposition temperatures. The films have thickness-0.2 pm and the full width at half maximum of the rocking curve 0.3-0.4 ". The milumal yield measured by backscattering spectrometry in the channeling mode mas 5.5 %, confirming high preferred orientation of the depos~ted films. The epitaxial character of the CeQ films was revealed by the measurement of the pscan. The aerosol MOCVD CeOL films were found to be suitable as a buffer layer for a preparation of superconducting high-T, films YBa2Cu,0superconducting films deposited on the CeOz l(ll02)sapphire exhibit superconducting transition temperature Ta4, = 86 K.
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