Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

Georgobiani, Veronika A.; Gonchar, K. A.; Осминкина, Л. А.; Timoshenko, V. Yu.

doi:10.1134/s1063782615080084

Cited by 18 publications

(15 citation statements)

References 29 publications

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“…With the photon energy of 1.65 eV, the size of nanocrystals was about 4 nm. Same nanocrystals were observed on nanowire sidewalls in [ 18 , 24 ]. The presence of the PL in the spectral region of 500–1100 nm will allow the use of SiNWs as luminescent labels for living cells as was shown for SiNWs fabricated by the standard MACE method [ 18 ].…”

Section: Resultsmentioning

confidence: 53%

“…Thus, SiNWs are structured as a single-crystal core that replicates the crystallographic orientation of the substrate and are covered by a thin (<10 nm) nanostructured layer. The same structure of SiNWs was observed for SiNWs fabricated on the lightly doped (10 Ω cm) substrate by standard MACE method [ 24 ].…”

Section: Resultsmentioning

confidence: 69%

“…The reaction is catalyzed by metal nanoparticles such as Au [ 10 , 12 ], Ag [ 13 ], or Pt [ 10 , 11 ] at the substrate surface, and the oxidizing agents are H 2 O 2 [ 10 – 13 ], KMnO 4 [ 14 ], or Fe(NO 3 ) 3 [ 15 ]. It has been shown that SiNWs, which were obtained by MACE, are found to possess such remarkable optical properties as visible photoluminescence (PL) [ 16 ], extremely low total reflection [ 17 , 18 ], enhancement of Raman scattering [ 17 , 19 – 21 ], coherent anti-Stokes light scattering [ 22 ], interband PL [ 17 , 19 – 21 ] and efficiency of generation of third harmonics [ 23 ] in comparison with the corresponding intensities for c-Si, and sensitivity of visible PL to molecular surroundings [ 24 ]. However, HF is rather toxic and may also result in hypocalcemia and hypomagnesemia [ 25 ].…”

Section: Introductionmentioning

confidence: 99%

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Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

et al. 2016

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Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH4F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5–15 % in the spectral region λ < 1 μm in comparison to crystalline silicon (c-Si) substrate. The interband photoluminescence (PL) and Raman scattering intensities increase strongly for SiNWs in comparison with the corresponding values of the c-Si substrate. These effects can be interpreted as an increase of the excitation intensity of SiNWs due to the strong light scattering and the partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500–1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.

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Section: Resultsmentioning

confidence: 53%

Section: Resultsmentioning

confidence: 69%

Section: Introductionmentioning

confidence: 99%

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Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

et al. 2016

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“…For example, higher temperatures were shown to increase the rate of Si NWs etching on wafers 52 and the level of doping in Si wafers affected the porosity of the Si NWs. 53,54 HL-MACE: effect of H2O2 amount and etching time. For HL-MACE of 44-75 µm MG Si powders (n(Ag) = 4.8 mmol), we investigated the dependence of H2O2/Si molar ratio and etching time (Sections S3 and S4 of Supporting Information, respectively).…”

Section: The Lack Of Parallel Etch Tracks Demonstrated That In Ll-mace the Motion Of Ag Nanoparticles Wasmentioning

confidence: 99%

Controlling the Nature of Etched Si Nanostructures: High- versus Low-Load Metal-Assisted Catalytic Etching (MACE) of Si Powders

Tamarov

Swanson

Unger

et al. 2019

ACS Appl. Mater. Interfaces

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“…The reaction is catalyzed by metal nanoparticles such as Au [10,12], Ag [13], or Pt [10,11] at the substrate surface, and the oxidizing agents are H 2 O 2 [10][11][12][13], KMnO 4 [14], or Fe(NO 3 ) 3 [15]. It has been shown that SiNWs, which were obtained by MACE, are found to possess such remarkable optical properties as visible photoluminescence (PL) [16], extremely low total reflection [17,18], enhancement of Raman scattering [17,[19][20][21], coherent anti-Stokes light scattering [22], interband PL [17,[19][20][21] and efficiency of generation of third harmonics [23] in comparison with the corresponding intensities for c-Si, and sensitivity of visible PL to molecular surroundings [24]. However, HF is rather toxic and may also result in hypocalcemia and hypomagnesemia [25].…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

Gonchar¹,

Zubairova²,

Schleusener³

et al. 2017

Nano Online

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Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH 4 F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5-15 % in the spectral region λ < 1 μm in comparison to crystalline silicon (c-Si) substrate. The interband photoluminescence (PL) and Raman scattering intensities increase strongly for SiNWs in comparison with the corresponding values of the c-Si substrate. These effects can be interpreted as an increase of the excitation intensity of SiNWs due to the strong light scattering and the partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500-1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.

show abstract

Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

Cited by 18 publications

References 29 publications

Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

Controlling the Nature of Etched Si Nanostructures: High- versus Low-Load Metal-Assisted Catalytic Etching (MACE) of Si Powders

Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

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