Structural and photoluminescence properties of Cr2+:ZnSe films deposited by radiofrequency magnetron co-sputtering for mid-infrared microlaser applications

REFLEX: a program for the analysis of specular X-ray and neutron reflectivity data

“…Several years ago, we developed a program within MATLAB (The MathWorks Inc., Natick, MA, USA) with the acronym REFLEX, which was abundantly and freely distributed to many users throughout the world without any specific reference. Owing to this lack of reference, only a few authors have so far mentioned the use of our program (Vivet et al, 2008(Vivet et al, , 2010Morales et al, 2005;Lacour et al, 2007). The development of REFLEX in our group was motivated by extensive analyses of XRR data in different types of environment, including relative humidity, high CO 2 pressure and high temperature.…”

Luminescence properties of Cr2+:ZnSe: Comparison between a single crystal and a film deposited by RF magnetron co-sputtering

“…As discussed in a previous paper, X-ray dispersive energy analyses reveal that both samples have a Zn-Se ratio equal to the unity [16]. The Cr 2 + concentration of the single crystal was deduced from the OT analysis.…”

“…In a previous paper we determined the following optimal deposition parameters corresponding to the highest mid-IR photoluminescence emission intensity: The ZnSe-to-SiO 2 sputtered area ratio was about 80% in order to avoid or significantly reduce the incorporation of SiO 2 in the deposited films, the Ar precursor gas pressure in the sputtering chamber was 2 Pa, the substrate to target distance was fixed to 7 cm, the RF power was 250 W, and the Cr quantity on the target was 0.17 g [16,17]. The corresponding film (thickness¼26 mm) is polycrystalline in nature, highly crystallised and textured in both cubic and hexagonal ZnSe structures and exhibit strong tensile in-plane residual stress [18].…”

“…In the case of Cr 2 + :ZnSe, pulsed [7], continuous wave [8], mode locked [9] and electroluminescence [10,11] operations are yet to be demonstrated at RT in the 2-3 mm region [12]. Research studies of Cr 2 + :ZnSe are not limited to bulk crystals, but also include thin films prepared by molecular beam epitaxy (MBE) [13], pulsed laser ablation [14] and radiofrequency (RF) magnetron sputtering [15,16] techniques for the purpose of fabricating compact laser systems. In this paper, we compare the optical properties of a Cr 2 + :ZnSe film deposited by RF magnetron sputtering with those of a post growth thermal diffusion doped Cr 2 + :ZnSe single crystal.…”

Zero-field splitting parameters and local structures for tetragonal Cr 2+ centers in Cr 2+ -doped ZnSe semiconductors

“…The ZnSe semiconductor doped with Cr 2+ is one of the most promising complexes, with many attractive spectroscopic properties, laser properties, and nonlinear optical properties, and thus has been widely used in, e.g., optoelectronic and spintronic devices. [1][2][3][4][5][6][7][8][9][10][11] In general, the above properties or behaviors are closely related to the local lattice structures and electronic states of the doped transition-metal impurities, which can be analyzed by means of the electron paramagnetic resonance (EPR) technique. EPR is recognized as a powerful tool to investigate the local lattice structures.…”