It was recently discovered that a transparent n-type (Ba,La)SnO 3 system has electrical mobility as high as 320 cm 2 V −1 s −1 at room temperature and superior thermal stability up to ∼500 • C. To understand comparatively the carrier-scattering mechanism in the doped BaSnO 3 , we investigate the physical properties of the single crystals of BaSn 1-x Sb x O 3 (x = 0.03, 0.05, and 0.10), which also show the n-type characters via the Sn site doping by Sb. Transmittance of the grown single crystals in the visible spectral region turn out to be similar to that of the (Ba,La)SnO 3 system, maintaining optical transparency. Temperature-dependent Hall effect measurements reveal that the electrical mobility at room temperature reaches as high as 79.4 cm 2 V −1 s −1 at a carrier density of 1.02 × 10 20 cm −3 , and upon increasing carrier density further, it systematically decreases nearly proportional to the inverse of the carrier density. The overall reduced mobility of the Ba(Sn,Sb)O 3 system as compared to the (Ba,La)SnO 3 system is attributed to the enhanced scattering caused by the Sb ions located in the direct conduction path. Based on the inverse proportionality between the carrier density and the electrical mobility, we suggest that the neutral impurity scattering becomes particularly strong in the Ba(Sn,Sb)O 3 .