Structural and optical studies of chemically deposited Sn2S3 thin films

Güneri, Emine; Göde, Fatma; Boyarbay, B.; Gümüş, C.

doi:10.1016/j.materresbull.2012.06.031

Cited by 26 publications

(19 citation statements)

References 22 publications

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“…4) Table II. It is observed that the undoped film has a band gap of 1.94 eV which exactly matches with the value reported by Guneri et al [11] for Sn 2 S 3 films deposited by chemical bath technique. As can be seen from Table II, the E g values of the doped films were found to be blue shifted, which can be attributed to the Burstein-Moss (BM) effect.…”

Section: Optical Studiessupporting

confidence: 89%

“…Sn 2 S 3 is one such material which exhibit 3D nanostructured network depending on the preparation conditions. Sn 2 S 3 thin films have been prepared earlier by various techniques such as spray pyrolysis [10], chemical bath deposition [11], potentiostatic electrodeposition [12], etc. Among these techniques, spray pyrolysis is a promising technique for preparing semiconducting thin films suitable for energy conversion applications.…”

Section: Introductionmentioning

confidence: 99%

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Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Gnanamuthu¹,

Punithavathy²,

Jeyakumar³

et al. 2018

Acta Phys. Pol. A

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This paper reports the synthesis, crystal structure, surface morphology, optical and electrical properties of Mgdoped Sn2S3 thin films deposited by spray pyrolysis technique. All the films exhibit orthorhombic crystal structure with a (211) preferential orientation. Crystallite size calculations based on the Debye-Scherrer formula indicated that the Sn2S3 crystallite size increases with Mg content from 27.97 nm to 33.58 nm. Scanning electron microscopy images showed that all the films were very smooth composed of nanoneedle and nanoplate shaped grains. The band gap energy of the films exhibits a blue shift from 1.94 eV to 2.09 eV with increase in Mg concentration. Resistivity values of the undoped and Mg-doped Sn2S3 films were found to be in the order of 0.1 Ωcm. From the obtained results it is observed that the Sn2S3 film coated with 2 wt% Mg concentration exhibits better physical properties.

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Section: Optical Studiessupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Gnanamuthu¹,

Punithavathy²,

Jeyakumar³

et al. 2018

Acta Phys. Pol. A

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“…The size of the sheet-like surface crystallites ranged 150–300 nm. A similar sheet-like surface morphology was also reported for Sn 2 S 3 thin films synthesized using a chemical solution method [5]. The periphery of the sheet-like Sn 2 S 3 became rough and passivated after the postannealing procedure.…”

Section: Resultssupporting

confidence: 75%

“…For practical scientific applications, tin sulfide semiconductors in the form of a thin-film structure are in high demand. Several synthesis techniques, such as spray pyrolysis [3], thermal evaporation [4], chemical bath deposition [5], and chemical vapor deposition [6], have been successfully employed in preparing tin sulfide semiconductor thin films. Sputtering thin-film preparation methods are frequently used to fabricate complex compounds in the semiconductor industry because they enable easy process control, large area deposition, feasibility with a wide range of thin-film thickness, and high reproducibility [7–9].…”

Section: Introductionmentioning

confidence: 99%

Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing

2016

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Well-crystallized Sn2S3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn2S3 thin films exhibited a sheet-like feature. The Sn2S3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing the as-synthesized Sn2S3 thin films further in ambient air at 400 °C engendered roughened and oxidized surfaces on the Sn2S3 thin films. Transmission electron microscopy analysis revealed that the surfaces of the Sn2S3 thin films transformed into a SnO2 phase, and well-layered Sn2S3–SnO2 heterostructure thin films were thus formed. The Sn2S3–SnO2 heterostructure thin film exhibited a visible photoassisted room-temperature gas-sensing behavior toward low concentrations of NO2 gases (0.2–2.5 ppm). By contrast, the pure Sn2S3 thin film exhibited an unapparent room-temperature NO2 gas-sensing behavior under illumination. The suitable band alignment at the interface of the Sn2S3–SnO2 heterostructure thin film and rough surface features might explain the visible photoassisted room-temperature NO2 gas-sensing responses of the heterostructure thin film on exposure to NO2 gas at low concentrations in this work.

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“…The Raman spectrum of the sample SGBS570 shows peaks at 84.9 cm À1 , 162.1 cm À1 , 175.2 cm À1 , 191.7 cm À1 and 220.1 cm À1 which are assigned to the SnS phase [24,27]. A weak peak located at 58.2 cm À1 is also observed and attributed to the Sn 2 S 3 phase [24,28]. The sample SGB570 has vibrational modes similar to the SGBS570 but in this case the intensity of the mode assigned to SnS at 84.9 cm À1 increased substantially.…”

Section: Resultsmentioning

confidence: 99%

Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin films

Sousa

Cunha

Fernandes

2014

Journal of Alloys and Compounds

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Tin sulphide thin films have been grown on soda-lime glass substrates through the annealing of RF-magnetron sputtered SnS 2 precursors. Three different approaches to the annealing were compared and the resulting films thoroughly studied. One series of precursors was annealed in a tubular furnace directly exposed to a flux of sulphur vapour plus forming gas, N 2 + 5%H 2 , and at a constant pressure of 500 mbar. The other two series of identical precursors were annealed in the same furnace but inside a graphite box with and without elemental sulphur evaporation again in the presence of N 2 + 5%H 2 and at the same pressure as for the sulphur flux experiments. Different maximum annealing temperatures for each set of samples, in the range of 300-570°C, were tested to study their effects on the properties of the final films. The resulting phases were structurally investigated by X-Ray Diffraction (XRD) and Raman spectroscopy. Annealing of SnS 2 precursors in sulphur flux produced films where SnS 2 was dominant for temperatures up to 480°C. Increasing the temperature to 530°C and 570°C led to films where the dominant phase became Sn 2 S 3. Annealing of SnS 2 precursors in a graphite box with sulphur vapour at temperatures in the range between 300°C and 480°C the films are multi-phase, containing Sn 2 S 3 , SnS 2 and SnS. For high annealing temperatures of 530°C and 570°C the films have SnS as the dominant phase. Annealing of SnS 2 precursors in a graphite box without sulphur vapour at 300°C and 360°C the films are essentially amorphous, at 420°C SnS 2 is the dominant phase. For temperatures of 480°C and 530°C SnS is the dominant phase but also same residual SnS 2 and Sn 2 S 3 phases are observed. For annealing at 570°C, according to the XRD results the films appear to be single phase SnS. The composition was studied using energy dispersive spectroscopy being then correlated with the annealing temperature. Scanning electron microscopy studies revealed that the SnS films exhibit small grain structure and the film surface is rough. Optical measurements were performed, from which the band gap energies were estimated. These studies show that the direct absorption transitions of SnS are at 1.68 eV and 1.41 eV for annealing in graphite box with and without elemental sulphur evaporation, respectively. For the indirect transition the values varied from 1.49 eV to 1.37 eV. The results of this work show that the third approach is better suited to produce single phase SnS films. However, a finer tunning of the duration of the high temperature plateau of the annealing profile is required in order to eliminate the b-Sn top layer.

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Structural and optical studies of chemically deposited Sn2S3 thin films

Cited by 26 publications

References 22 publications

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing

Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin films

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Structural and optical studies of chemically deposited Sn2S3 thin films

Cited by 26 publications

References 22 publications

Investigations on the Properties of Nanostructured Mg-Doped Sn2S3 Thin Films towards Photovoltaic Applications

Investigations on the Properties of Nanostructured Mg-Doped Sn2S3 Thin Films towards Photovoltaic Applications

Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing

Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin films

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Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications