Structural and optical properties of tin sulfide nanostructures

Abstract

This paper presents modification of tin sulfide (SnS) thin films by pulsed laser irradiation. Tin sulfide films of 1 µm thickness were prepared using chemical bath deposition (CBD) technique. The chemical bath contained 5 ml acetone, 12 ml of triethanolamine, 8 ml of 1 M thioacetamide, 10 ml of 4 M ammonium hydroxide and 65 ml of distilled water. The chemical bath was kept at a constant temperature of 60 °C for 6 h which resulted in SnS films with 500 nm thickness. By double deposition, the final thick- ness of SnS thin films obtained was 1 µm. Laser processing was conducted to modify the structure, morphology and physical properties of the SnS thin films. The laser specifications were pulsed Nd:YAG laser with 532 nm wavelength, 300 mJ pulse energy and 10 ns pulse width. Properties of the laser-irradiated SnS thin films were compared with the as- prepared SnS thin films. The changes in structure, morphology, optical and electrical properties of the laser-irradiated SnS thin films were described.

Organic solar cells and their applications Shah, Razon Oda, F. Hazuan

“…The quinoidal resonance structure of the strong electron-withdrawing unit isoindigo effectively re-duces bond length alternation and leads to low-energy electronic states. No parasitic process in competition with SF was observed [9].…”

GaN/Al2O3 heterostructure and intrinsic lattice constant of GaN

“…Therefore, hetero-epitaxial growth on a sapphire substrate is usually employed for the preparation of single crystalline GaN. However, thermal stress occurs in the heterostructure of GaN and sapphire during cooling after the growth owing to the large difference in the thermal expansion coefficient, resulting in bending and/ or cracking of the heterostructure [2][3][4]. Thus, the residual strain induced in the GaN film causes fluctuations of lattice constants.…”