2008
DOI: 10.1016/j.jallcom.2007.08.048
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Structural and optical properties of undoped and aluminium doped zinc oxide nanoparticles via precipitation method at low temperature

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Cited by 164 publications
(74 citation statements)
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“…By comparison of our experiments with those of e.g. Suwanboon 47 we confirm that not only the nominal amount of Al in the ZnO determines their morphology and other properties but other factors are of importance too. Possibly, the effective Al uptake, which differs from the nominal amount (see further), as well as the mechanism and kinetics of nanoparticle formation, determined by the synthesis conditions, play a key role.…”
Section: Resultssupporting
confidence: 74%
“…By comparison of our experiments with those of e.g. Suwanboon 47 we confirm that not only the nominal amount of Al in the ZnO determines their morphology and other properties but other factors are of importance too. Possibly, the effective Al uptake, which differs from the nominal amount (see further), as well as the mechanism and kinetics of nanoparticle formation, determined by the synthesis conditions, play a key role.…”
Section: Resultssupporting
confidence: 74%
“…This might be due to the small quantity of aluminium which can substitute the tetrahedral or octahedral sites in the ferrite structure; therefore, there is no change of peak positions when doping ferrites with aluminium in this study. The XRD patterns correspond to similar observations made by Suwanboon et al with aluminium doped nanoparticles [18]. The average crystallite size of the prepared ferrite particles were calculated from the width of the most intense diffraction peak (311) by means of the Debye-Scherrer equation [19]: (2) where t is the crystallite size, β is the full width of the diffraction line at half maximum (FWHM) intensity measured in radians, λ is the X-ray wavelength of the Cu Kα = 1.54 Å, and θ refers to the Bragg's angle.…”
Section: Electrochemical Measurementssupporting
confidence: 89%
“…40,41 The Burstein-Moss effect is frequently observed in n-type semiconductors. 42,43 Electron-doped ZnO with a high concentration of n-type carriers is easily achievable, because intrinsic defects in ZnO may render it naturally n-type. 23,44 An increase in the carrier concentration in Ni-doped ZnO will cause the Fermi level to move into the conduction band.…”
Section: Optical Propertiesmentioning
confidence: 99%