Structural and Optical Properties of AgInSe2 Films Prepared on Indium Tin Oxide Substrates

Lee, Jeoung Ju; Lee, Jong Duk; Ahn, Byung Yong; Kim, Hyeon Soo; Kim, Kun Ho

doi:10.3938/jkps.50.1099

Cited by 13 publications

(12 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig. (1) displays XRD for AgInSe 2 pure and doped at RT and annealing at 573 K when the thickness (400) nm deposition on glass substrate, this figure shows polycrystalline for the AgInSe 2 films have tetragonal structure with main peak when 2θ ≈25.726 o when the preferred orientation (112) [1,2] and anther peak appear at 2θ equal to 42.97 o . Table (1) show our study, the compare with the ICDD 00-038-0952 card standard value found very good matched, the degree of crystalline increasing when Al ratio dopant and annealing at 573 K. Peak intensity of (112) was increased with add of Al.…”

Section: Resultsmentioning

confidence: 96%

“…However, annealed thin films show higher crystalline quality compared to as deposited thin films this may attributed to the nucleation formation. Figures (2) present the AFM images of AgInSe2 (Al) thin films. It is seen that all films surfaces exhibit a large number of grains of small size and uniform distribution.…”

Section: Resultsmentioning

confidence: 99%

“…The melting point of AIS film is lower than CIS which make them commercially more preferable over CIS. They can also be the type of conductivity as n-type or p-type depending on the type of majority carrier either electron or hole [2]. (AIS) is the best promising absorber materials for photovoltaic cell, because (AIS) have optimum direct energy gap, high optical absorption (_10 −5 cm −1 ) [3].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

Sobhi¹,

Hussein²

2022

View full text Add to dashboard Cite

Chalcopyrite thin films ternary Silver Indium Diselenide AgInSe2 (AIS) pure and Aluminum Al doped with ratio 0.03 was prepared using thermal evaporation with a vacuum of 7*10-6 torr on glass with (400) nm thickness for study the structural and optical properties. X-ray diffraction was used to show the inflance of Al ratio dopant on structural properties. X-ray diffraction show that thin films AIS pure, Al doped at RT and annealing at 573 K are polycrystalline with tetragonal structure with preferential orientation (112). raise the crystallinity degree. AFM used to study the effect of Al on surfaces roughness and Grain Size Optical properties such as the optical band gap, absorption coefficient, Extinction coefficient, refractive index, real and imaginary part of dielectric constant were calculated to inspect the influence of the Aluminum on the optical Parameters of AIS thin film. UV/Visible measure show the lowering in energy gap to 1.35 eV for AgInSe2: Al at 573 K this energy gap making these samples suitable for photovoltaic application.

show abstract

Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

Sobhi¹,

Hussein²

2022

View full text Add to dashboard Cite

show abstract

“…In the case of samples in acetone, well defined peaks detected (at 443.7 and 443.3) for the ACE-1064 and ACE-532 samples, respectively, these peaks are in good agreement with analysis for chemical sate of indium in the CIGS target. Deconvolution of peaks for indium in ethanol (ET-1064) sample shows a minor peak at binding energy close to 444.1 eV, which indicates the presence of binary In 2 Se 3 compound [27]. As in the case of photoelectron spectra of copper, indium also presented two peaks for CIGS nanoparticles obtained in distilled water for 532 (DW-532) and 1064 nm (DW-1064) ablation due to the presence of binary oxides.…”

Section: Chemical Statementioning

confidence: 87%

CuInGaSe 2 nanoparticles by pulsed laser ablation in liquid medium

Mendivil

García-Quiñonez

Krishnan

et al. 2015

Materials Research Bulletin

View full text Add to dashboard Cite

“…AIS semiconductors have been produced by several techniques such as: co-evaporation [3,[10][11][12], ultra-high vacuum pulsed laser deposition [13], horizontal Bridgman method [14], molecular beam epitaxy [5], vertical gradient temperature freezing method [15] and solid state microwave irradiation [16].…”

Section: Introductionmentioning

confidence: 99%

AgInSe2 Thin Films Prepared by Electrodeposition Process

Aouaj¹

2015

IJMSA

View full text Add to dashboard Cite

In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO 3 , 6x10-2 M InCl 3 and 3x10-2 M of H 2 SeO 3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between-0.3 V and-1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films' compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe 2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe 2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.

show abstract

Structural and Optical Properties of AgInSe2 Films Prepared on Indium Tin Oxide Substrates

Cited by 13 publications

References 0 publications

Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

CuInGaSe 2 nanoparticles by pulsed laser ablation in liquid medium

AgInSe2 Thin Films Prepared by Electrodeposition Process

Contact Info

Product

Resources

About