Structural and optical properties of four-hexagonal polytype nanocrystalline silicon carbide films deposited by plasma enhanced chemical vapor deposition technique

UV and blue light emission from SiC nanoclusters in annealed amorphous SiC alloys

“…5, the signals related to SiC vibration band around 500 cm À1 can be observed for annealed sample prepared at R = 15 while a strong Si-Si TO mode (480 cm À1 ) dominates the Raman spectrum for annealed sample deposited with R = 2. Two bands at 610 cm À1 and 790 cm À1 can be identified in Raman spectra for annealed samples prepared with R = 15 which indicates the existence of SiC nanoclusters with 4H-SiC structures in the films [14]. The similar spectrum was reported in 1000°C annealed a-SiC:H films with high carbon concentration [15].…”

Influence of the oxygen content in obtaining tunable and strong photoluminescence from low-temperature grown silicon oxycarbide films

“…It can be seen the broad band between 250 cm À1 and 550 cm À1 exhibits two peaks at $430 cm À1 and $480 cm À1 , which are ascribed to the longitudinal optical (LO) and the transverse-optical (TO) vibration mode of amorphous silicon [21], respectively. Moreover, the two small peaks from SiAC TO vibration mode are seen at $600 cm À1 and $800 cm À1 , which is typical for amorphous SiC [22]. The above results demonstrate that there is no Si or SiC nanocrystals exist in the films.…”

Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

“…The broad Raman band 700∼1000 cm −1 indicates the amorphous matrix in the deposited films [11] . In addition, two separated peaks at 794 cm −1 and 970 cm −1 appeared in this strong board band without CH 4 being added, corresponding to cubic and/or 4H-, 6H-SiC [2,12,13] . The Raman peak at 970 cm −1 shifted to 900 cm −1 after CH 4 was introduced into the reactor.…”

“…Concerning SiC films in the form of 6H and 4H polytypes, they are typically grown through physical vapour transport [1] . Recently, ZHANG et al deposited 4H-SiC films by using plasmaassisted chemical vapour deposition [2] .…”