Structural and optical properties of Zn(Mg,Cd)O alloy films grown by remote-plasma-enhanced MOCVD

ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 °C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.

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“…Details on the growth can be found in Ref. 13. A series of four samples with nominal Cd concentrations ranging from x ¼ 0 to 0.45 were studied.…”

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confidence: 99%

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

Lopez-Ponce¹,

Hierro²,

Ulloa³

et al. 2013

Applied Physics Letters

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“…A weak near-band-edge (NBE) emission peak was observed at 3.26eV, while the deep level emission at 2.48eV which is related to oxygen vacancy [4][5][6][7][8][9][10].…”

Section: Resultsmentioning

confidence: 99%

Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates

Tun¹

2015

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ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.

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“…19, showing a typical slow PL lifetime of 125 ps. At Cd content over 0.3, it drastically increased up to 54 ns and was two orders longer than that in ZnO [11]. The decay times τ 1 and τ 2 for the excitons at 8 K were 16 and 80 ps, respectively, in Zn 0.85 Cd 0.15 O grown by remote-plasma enhanced metalorganic chemical vapor deposition [12].…”

Section: Introductionmentioning

confidence: 91%

“…Yamamoto et. al [11] reported that the PL lifetime of ZnO (125 ps) gradually increases with increasing Cd content under 0. 19, showing a typical slow PL lifetime of 125 ps.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method

Shtepliuk

Khranovskyy

Lashkarev

et al. 2013

Applied Surface Science

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Investigation of Cd behavior in the ZnCdO alloys, where Cd content exceeds the solubility limit, is of importance due to possible impurity segregation and second phases' formation in this material. We have studied the Cd behavior in the Zn1-xCdxO films deposited by dc magnetron sputtering on different substrates: c-plane Al2O3, bare Si (1 0 0) and Au (45 nm)/Si (1 0 0). It is revealed that Cd content of 10 at. % in the target results in average 6-8 at. % of Cd in the films, depending on the substrate type. Structural analysis based on X-ray diffraction revealed the absence of Cd-related secondary phases. Time-resolved photoluminescence (TRPL) and high-resolution energy dispersive X-ray analysis (EDX) help to understand the recombination dynamics of spontaneous emission and to establish correlations between cadmium content and radiative lifetime. We have revealed that the internal quantum efficiency is influenced by the Cd content and defect concentration. It is suggested that increasing of the cadmium content results in the reduction of nonradiative recombination centers originating from point defects

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Structural and optical properties of Zn(Mg,Cd)O alloy films grown by remote-plasma-enhanced MOCVD

Cited by 53 publications

References 41 publications

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates

Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method

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