Numerous
methods have been employed for utilizing inorganic thin
films to improve the stability of transparent photovoltaics (TPVs).
However, the use of these methods was restricted due to limitations
involving restricted physical dimensions, complex fabrication processes,
visible transparency, and photovoltaic performance. In this study,
a novel approach to novel TPVs based on wide band gap inorganic thin-film
solar cell devices was first proposed. This approach was based on
an Sb2S3 thin-film absorber and the optical
optimization of a planar-type solar cell device structure. High-quality
and uniformly thick Sb2S3 thin films were deposited
via atomic layer deposition (ALD) to produce a high-quality transparent
absorber layer for a planar-type transparent thin-film solar cell.
To maintain the light transmittance of ALD-Sb2S3 solar cell devices, a flat indium tin oxide (ITO) substrate, a low-temperature-processed
ALD TiO2 electron-transport layer (ETL), and an ultrathin
Au top electrode were systematically combined with the transparent
ALD-Sb2S3 absorber layer. The transparent ALD-Sb2S3 solar cell device showed a power conversion
efficiency of 3.44% and an average light transmittance of 13%. These
results proposed the technological possibility of using novel inorganic
transparent Sb2S3 solar cell devices for transparent
applications, such as self-powered transparent displays, high-efficiency
tandem solar cells, robust bifacial solar cells, and so on.