Structural and optical properties of GaAs/AlGaAs superlattice layer on InAs quantum dots

Jeong, Youchul; Choi, Hong‐Seok; Yumi, Park; Hwang, Sung Kwan; Yoon, Jin-Joo; Lee, Jewon; Leem, Jae‐Young; Minhyon, Jeon

doi:10.1016/j.jcrysgro.2004.09.061

Cited by 2 publications

(2 citation statements)

References 29 publications

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“…In this type of material, the study of structural properties is of great importance, since it is possible to tune electronic properties that lead to the optical response of the system. In 2004, Jeong et al [33] studied these properties in a GaAs/AlGaAs SL layer on InAs quantum dots by means of photoluminescence, photoreflectance spectroscopy, and transmission electron microscopy. Their results showed that the wavelength of the quantum dots was effectively tailored by the high potential barriers.…”

Section: Introductionmentioning

confidence: 99%

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

Gil-Corrales

Morales

Yücel

et al. 2022

IJMS

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In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the number of periods of the superlattice and its shape by means of geometric parameters. The effect of a non-resonant intense laser field has been included in the system to analyze the changes in the electronic transport properties by means of the Landauer formalism. It is found that the highest tunneling current is given for the GaAs-based compared to the InSe-based system and that the intense laser field improves the current–voltage characteristics generating higher current peaks, maintaining a negative differential resistance (NDR) effect, both with and without laser field for both materials and this fact allows to tune the magnitude of the current peak with the external field and therefore extend the range of operation for multiple applications. Finally, the power of the system is discussed for different bias voltages as a function of the chemical potential.

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Section: Introductionmentioning

confidence: 99%

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

Gil-Corrales

Morales

Yücel

et al. 2022

IJMS

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“…During the growth process of all these devices, defect centers are induced between the conduction and valence band due to the lattice relaxation process which act as electron traps [5,6]. These defects and traps affects the fundamental device characteristics such as mobility, carrier density, saturation current, optical emission efficiency and emission wavelength [7][8][9][10]. Apart from this, the traps are known to be responsible for the persistent photoconductivity effect [11].…”

Section: Introductionmentioning

confidence: 99%

Charge trapping in a double quantum well system

Kannan

Kim

Farrer

et al. 2008

J. Phys.: Condens. Matter

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The effect of charge trapping in a double quantum well system is studied by undertaking transport measurements at 1.2 K as a function of front gate voltage. On sweeping the gate bias between −0.2 and 0.6 V, the trapping of electrons in the defect levels induced by the AlGaAs barrier is complemented by the decrease in the overall carrier density in the quantum well. The charging of these defect levels increases the scattering potential and enhances the overall resistance of the two dimensional electron gas. The trapped charges were completely depleted on reverse sweeping the gate bias to −0.1 V. The charging and discharging of the defect levels gave rise to a hysteresis effect in the transport measurements.

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Structural and optical properties of GaAs/AlGaAs superlattice layer on InAs quantum dots

Cited by 2 publications

References 29 publications

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

Charge trapping in a double quantum well system

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